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Details, datasheet, quote on part number:PTF080601
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Datasheet text preview:
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860960 MHz
Description
The PTF080601 is a 60W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typica l EDGE Modulation Spectrum Performance Mod Spectrum vs. Output Power
VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz
-20 50 Ef f iciency 45 40
Features
· · Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power
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Modulation Spectrum (dB)
-30 -40 -50 -60 -70 -80 -90 32 34 36 38 40 42 600KHz 400KHz
·
Efficiency (%)
35 30 25 20 15 10 5 44 46
· · ·
PTF080601A Package 20248 PTF080601E Package 30248 PTF080601F Package 31248
Output Power (dBm)
RF Characteristics at TCASE = 25°C unless otherwise indicated
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, fC = 960 MHz, tone spacing = 1000 kHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps D IMD
Min
-- -- --
Typ
18 42 32
Max
-- -- --
Units
dB % dBc
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, P OUT = 30 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 KHz Modulation Spectrum @ 600 KHz Gain Drain Efficiency Developmental Data Sheet 1
Symbol
EVM (RMS) ACPR ACPR Gps D
Min
-- -- -- -- --
Typ
2.0 61 74 18 40
Max
-- -- -- -- --
Units
% dBc dBc dB % 2003-12-05
Developmental PTF080601
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA VDS = 28 V, V GS = 0 V VGS = 10 V, IDS = 1 A VDS = 28 V, IDQ = 550 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
-- -- -- -- --
Typ
65 1.0 0.1 3.2 --
Max
-- -- -- -- 1.0
Units
V µA V µA
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) PTF080601A PTF080601E TSTG RJC RJC PTF080601E PD PTF080601A
Symbol
VDSS VGS TJ PD
Value
65 0.5 to +12 200 180 1.03 195 1.11 40 to +150 0.972 0.897
Unit
V V °C W W/°C W W/°C °C °C/W °C/W
Developmental Data Sheet
2
2003-12-05
Developmental PTF080601
Type PTF080601A PTF080601E PTF080601F
Package Outline 20248 30248 31249
Package Description Standard ceramic, flange Thermally enhanced, flange Thermally enhanced, no flange
Marking PTF080601A PTF080601E PTF080601F
Package Outline Specifications Package 20248
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Developmental Data Sheet
3
2003-12-05
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