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Part: PTF080901
Category:
Discrete
-> Transistors
Description: Ldmos RF Power Field Effect Transistor 90 w, 869-960 MHZ
Company: Infineon Technologies Corporation
Datasheet: Download PTF080901 datasheet File size : 66 kB
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Datasheet text preview:
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
· · Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
EDGE Modulation Spectrum Performance
VD D = 28 V, ID Q = 700 mA, f = 959.8 MHz
0 55 Ef f icienc y 50 45 40 35 400 kHz 30 25 20 600 kHz 36 38 40 42 44 46 48 50 15 10 -10 -20 -30 -40 -50 -60 -70 -80 -90
·
Modulation Spectrum (dB)
Drain Efficiency (%)
· · · ·
PTF080901E Package 30248
Output Power (dBm)
ESD: Electrostatic discharge sensitive device--observe handling precautions!
PTF080901F Package 31248
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 700 mA, P OUT = 45 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps
Min
-- -- -- -- --
Typ
2.5 62 74 18 40
Max
-- -- -- -- --
Unit
% dBc dBc dB %
D
TwoTone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps
Min
17 40 --
Typ
18 42 32
Max
-- -- 29
Unit
dB % dBc 2004-04-05
D
IMD
PTF080901
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
DrainSource Breakdown Voltage Drain Leakage Current OnState Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 650 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.1 3.2 --
Max
-- 1.0 -- 4 1.0
Unit
V µA V V µA
Maximum Ratings
Parameter
DrainSource Voltage GateSource Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 0.5 to +12 200 335 1.9 40 to +150 0.52
Unit
V V °C W W/°C °C °C/W
Typical Performance (measurements taken in production test fixture)
Modulation Spectrum
P OUT = 40 W, f = 959.8 MHz
2.1 -20
9
EDGE EVM Performance
V D D = 28 V, ID Q = 700 mA, f = 959.8 MHz
90 80
EVM RMS (average %) .
EVM RMS (average %) .
EV M
Modulation Spectrum (dBc)
1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 0.47
-30 -40 400 KHz -50 -60 -70 600 KHz -80 -90 0.57 0.67 0.77 0.87 -100 0.97
8 7 6 5 4 3 2 1 0 36 38 40 42 44 46 48 50 EVM Efficiency
60 50 40 30 20 10 0
Quiescent Current (A)
Output Power (dBm)
All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 2 2004-04-05
Drain Efficiency (%)
70
PTF080901
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz
0 -10 -20
17 Gain 70
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
V D D = 28 V, ID Q = 650 mA
18 80
IMD (dBc)
Gain (dB)
-30 -40 -50 -60 -70 -80 43 45
3rd Order
16
Ef f iciency
60
5th 7th
15
Output Pow er
50
47
49
51
14 860
880
900
920
940
40 960
Output Power (dBm), PEP
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
V D D = 28 V, f1 = 959, f2 = 960 MHz
-20
Broadband Performance
V D D = 28 V, ID Q = 650 mA, POUT = 45 W
60 0 -3 Ef f iciency 40 30 20 Gain 10 860 880 900 920 940 -15 960 Return Loss -6 -9 -12
Gain (dB), Efficiency (%)
-25 -30 480 mA
50
IMD (dBc)
-35 -40 -45 -50 -55 -60 39 41 43 45 47 49 51 820 mA 650 mA
Output Power (dBm), PEP
Frequency (MHz)
All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 3 2004-04-05
Return Loss (dB)
Efficiency (%), POUT (dBm)
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