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Part: PZTA64
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
-> PNP
Description: PNP Silicon Darlington Transistor: -30v, -500ma
Company: Infineon Technologies Corporation
Datasheet: Download PZTA64 datasheet File size : 40 kB
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Datasheet text preview:
PNP Silicon Darlington Transistors
PZTA 63 PZTA 64
q For general AF applications q High collector current q High current gain q Complementary types: PZTA 13, PZTA 14 (NPN)
Type PZTA 63 PZTA 64
Marking PZTA 63 PZTA 64
Ordering Code (tape and reel) Q62702-Z2031 Q62702-Z2032
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
72 17
Symbol VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 30 30 10 500 800 100 200 1.5 150 65 ... + 150
Unit V
mA
W °C
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
PZTA 63 PZTA 64
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 °C Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V PZTA 63 PZTA 64 PZTA 63 PZTA 64 VCEsat VBEsat V(BR)CES V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 5000 10000 10000 20000 1.5 2.0 V 100 10 100 nA µA nA 30 30 10 V Values typ. max. Unit
Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz
fT
125
MHz
1)
Pulse test conditions: t 300 µs, D = 2 %.
Semiconductor Group
2
PZTA 63 PZTA 64
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz
Permissible pulse load Ptot max / Ptot DC = f (tp)
DC current gain hFE = f (IC) VCE = 5 V
Semiconductor Group
3
Others parts begin by pz
PZ-1 PZ-2 PZ-3
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