Details, datasheet, quote on part number: SFH3500FA
PartSFH3500FA
CategoryOptoelectronics => Photosensors => Phototransistors
DescriptionSilicon NPN Phototransistor
CompanyInfineon Technologies Corporation
DatasheetDownload SFH3500FA datasheet
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Features, Applications

NPN-Silizium-Fototransistor in SMR® Gehäuse Silicon NPN Phototransistor in SMR® Package SFH 3500/FA SFH 3505/FA

Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1060 nm (SFH 3500/3505) und bei 880 nm (SFH 3500 FA/3505 FA) SMR® (Surface Mount Radial) Gehäuse Hohe Empfindlichkeit Auf PCB aufsetzbar (SFH 3500/FA) oder in PCB einlegbar (SFH 3505/FA) Passend zu IRED SFH 451x, SFH 458x Für Oberflächenmontage (SMT) geeignet Gegurtet lieferbar Anwendungen Fertigungs- und Kontrollanwendungen der Industrie ,,Messen/Steuern/Regeln" Lichtschranken für Gleich- und Wechsellichtbetrieb

Features Especially suitable for applications from 1060 nm (SFH 3500/3505) and 880 nm (SFH 3500 FA/3505 FA) SMR® (Surface Mount Radial) package High sensitivity For mounting on pcb (SFH or in pcb (SFH 3505/FA) Matches IRED SFH 451x, SFH 458x Suitable for surface mounting (SMT) Available on tape and reel Applications A variety of manufacturing and monitoring applications For control and drive circuits Photointerrupters

Gehäuse Package 1 3/4), klares (SFH 3500/3505) und schwarz eingefärbtes (SFH 3500 FA/3505 FA) Epoxy-Gießharz, Anschlüsse (SFH 3500/3500 FA gebogen, SFH 3505/3505 FA gerade) 2.54-mm-Raster (1/10''), Kathodenkennzeichnung: siehe Maßzeichnung. 5 mm SMR® package 1 3/4), clear (SFH 3500/3505) and black-colored (SFH 3500 FA/3505 FA) epoxy resin, solder tabs (SFH 3500/3500 FA bent, SFH 3505/3505 FA straight) lead spacing mm (1/10''), cathode marking: see package outline.

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, 10 µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Wert Value Einheit Unit V mW K/W

Kennwerte (TA = 25 °C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol SFH 350x S max 450... 1060 Wert Value SFH 1070 nm Einheit Unit

Spectral range of sensitivity 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessungen der Chip-Fläche Dimension of chip area Halbwinkel Half angle Kapazität, VCE = 1 MHz, = 0 Capacitance Dunkelstrom, VCE = 20 Dark current


 

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