Details, datasheet, quote on part number: SFH4110
PartSFH4110
CategoryOptoelectronics => Display => LEDs => LED Lamps
DescriptionGAAS-infrared Emitter (mini Sidelooker)
CompanyInfineon Technologies Corporation
DatasheetDownload SFH4110 datasheet
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Features, Applications
GaAs-IR-Lumineszenzdiode (Mini Sidelooker) GaAs Infrared Emitter (Mini Sidelooker) SFH 4110

Wesentliche Merkmale Wellenlänge der Strahlung 950 nm Enger Abstrahlwinkel Hohe Strahlstärke Geringe Außenabmessungen Gehäusegleich mit Fototransistor SFH 3100 F Hoher Koppelfaktor in Lichtschranken in Verbindung mit SFH 3100 F Hohe Zuverlässigkeit Anwendungen Sender für Lichtschranken Bandende Erkennung (z.B. Videorecorder) Datenübertragung Positionsüberwachung Barcode-Leser ,,Messen/Steuern/Regeln" Münzzähler Bestellnummer Ordering Code Q62702-P5072

Features Peak wavelength 950 nm Narrow half angle High radiant intensity Small outline dimensions Same package as phototransistor SFH 3100 F High coupling factor in light barriers with SFH 3100 F High reliability Applications Emitter in photointerrupter Tape end detection (VCR e.g.) Data transmission Position sensing Barcode reader For control and drive circuits Coin counters

Gehäuse Package Klares Miniatur-Kunststoffgehäuse, seitliche Abstrahlung, Anschlüsse im 2,54-mm Raster, Kathodenkennzeichnung: kurzer Anschluß Clear miniature plastic package, sidelooker, solder tabs 2.54-mm (1/10"), cathode marking: short lead

Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, = 10 µs, = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung Thermal resistance junction - ambient Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei = 20 mA, = 50 Switching times, e from to 90% and from = 20 mA, = 50 Kapazität, Capacitance = 1 MHz Symbol peak Wert Value Einheit Unit nm Grad deg. mm ns Symbol Wert Value Einheit Unit A mW K/W

Top; Tstg VR IF (DC) IFSM Ptot RthJA

Kennwerte (TA = 25 °C) Characteristics (cont'd) Bezeichnung Parameter Durchlaßspannung, Forward voltage = 20 mA, 20 ms Sperrstrom, Reverse current 3 V Gesamtstrahlungsfluß, Total radiant flux = 20 mA, 20 ms Temperaturkoeffizient von Ie bzw. 20 mA Temperature coefficient 20 mA Temperaturkoeffizient von VF, 20 mA Temperature coefficient of VF, 20 mA Temperaturkoeffizient von 20 mA Temperature coefficient 20 mA Symbol Wert Value ( 1.4) Einheit Unit V

Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle 0.01 sr Bezeichnung Parameter Strahlstärke1) Radiant = 20 mA, 20 ms


 

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