Details, datasheet, quote on part number: SFH416-R
CategoryOptoelectronics => Display => LEDs => LED Lamps
DescriptionGAAS Infrared Emitter
CompanyInfineon Technologies Corporation
DatasheetDownload SFH416-R datasheet
Cross ref.Similar parts: QED233
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Features, Applications

Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Gute spektrale Anpassung an Si-Fotoempfänger SFH 415: Gehäusegleich mit SFH 300, SFH 203 Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb Sensorik Diskrete Lichtschranken Typ Type SFH 415 SFH 415-U SFH 416-R Bestellnummer Ordering Code Q62702-P1137 Q62702-P1139 Gehäuse Package

Features Very highly efficient GaAs-LED High reliability Spectral match with silicon photodetectors SFH 415: Same package as SFH 300, SFH 203

Applications IR remote control of hi-fi and TV-sets, video tape recorders, dimmers Remote control for steady and varying intensity Sensor technology Discrete interrupters

(T 13/4), schwarz eingefärbt, Anschluß 2.54-mm-Raster (1/10''), Kathodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 13/4), black-colored epoxy resin lens, solder tabs lead spacing mm (1/10''), cathode marking: short lead

Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, = 10 µs, = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 100 mA, 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax 100 mA Abstrahlwinkel Half angle SFH 415 SFH 416 Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top SFH 415 SFH 416 Symbol peak Wert Value 950 Einheit Unit nm Symbol Wert Value Einheit Unit A mW K/W

Kennwerte (TA = 25 °C) Characteristics (cont'd) Bezeichnung Parameter Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei = 100 mA, = 50 Switching times, e from to 90% and from = 100 mA, = 50 Kapazität, Capacitance = 1 MHz Durchlaßspannung, Forward voltage = 100 mA, 100 µs Sperrstrom, Reverse current 5 V Gesamtstrahlungsfluß, Total radiant flux = 100 mA, 20 ms Temperaturkoeffizient von Ie bzw. e, Symbol Wert Value 0.5 Einheit Unit µs

Temperaturkoeffizient von VF, 100 mA Temperature coefficient of VF, 100 mA Temperaturkoeffizient von 100 mA Temperature coefficient 100 mA


Some Part number from the same manufacture Infineon Technologies Corporation
SFH420 GAAS Infrared Emitter
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