Details, datasheet, quote on part number: SFH4203
CategoryOptoelectronics => Display => LEDs => LED Lamps
DescriptionHigh-speed GAAS Infrared Emitter (950nm)
CompanyInfineon Technologies Corporation
DatasheetDownload SFH4203 datasheet
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Features, Applications
Schnelle GaAs-IR-Lumineszenzdiode (950 nm) High-Speed GaAs Infrared Emitter (950 nm) SFH 4203

Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Gute Linearität = f [IF]) bei hohen Strömen Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Für Oberflächenmontage geeignet Gegurtet lieferbar Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser Industrieelektronik ,,Messen/Steuern/Regeln" Automobiltechnik Sensorik Alarm- und Sicherungssysteme IR-Freiraumübertragung Typ Type SFH 4203 Bestellnummer Ordering Code Q62702-P5232

Features Very highly efficient GaAs-LED Good Linearity = f [IF]) at high currents DC (with modulation) or pulsed operations are possible High reliability High pulse handling capability Suitable for surface mounting (SMT) Available on tape and reel Applications Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission

Gehäuse Package Mini TOPLED® Anodenkennzeichnung: abgesetzte Ecke Anode marking: bevelled edge

Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, = 10 µs, = 0 Surge current Verlustleistung Power dissipation Symbol Wert Value Einheit Unit A mW K/W

Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Wärmewiderstand Sperrschicht - Lötstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 100 mA, 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax = 100 mA, 20 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Symbol peak

Kennwerte (TA = 25 °C) Characteristics (cont'd) Bezeichnung Parameter Symbol Wert Value 10 Einheit Unit ns

Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei = 100 mA, = 20 ms, = 50 Switching times, e from to 90% and from = 100 mA, = 20 ms, = 50 Durchlassspannung, Forward voltage = 100 mA, 100 µs Sperrstrom, Reverse current 3 V Gesamtstrahlungsfluss, Total radiant flux = 100 mA, 20 ms Temperaturkoeffizient von Ie bzw. e,

Temperaturkoeffizient von VF, 100 mA Temperature coefficient of VF, 100 mA Temperaturkoeffizient von 100 mA Temperature coefficient 100 mA

Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle 0.01 sr Bezeichnung Parameter Strahlstärke Radiant intensity = 100 mA, 20 ms Strahlstärke Radiant intensity 100 µs Symbol Ie min. Ie typ. Ie typ. Werte Values 6.5 45 Einheit Unit mW/sr


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