Details, datasheet, quote on part number: SFH4281
CategoryOptoelectronics => Display => LEDs => LED Lamps
DescriptionGaalas Infrared Emitter in SMT Package
CompanyInfineon Technologies Corporation
DatasheetDownload SFH4281 datasheet
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Features, Applications
GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package SFH 4281

Wesentliche Merkmale GaAIAs-LED mit sehr hohem Wirkungsgrad Gute Linearität (Ie = f [IF]) bei hohen Strömen Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Oberflächenmontage geeignet Gegurtet lieferbar Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser Industrieelektronik ,,Messen/Steuern/Regeln" Automobiltechnik Sensorik Alarm- und Sicherungssysteme IR-Freiraumübertragung Typ Type SFH 4281 Bestellnummer Ordering Code Q62702-P5000

Features Very highly efficient GaAIAs-LED Good Linearity (Ie = f [IF]) at high currents DC (with modulation) or pulsed operations are possible High reliability High pulse handling capability Suitable for surface mounting (SMT) Available on tape and reel Applications Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission

Gehäuse Package Kathodenkennzeichnung: abgesetzte Ecke cathode marking: bevelled edge TOPLED® Reverse Gullwing

Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, = 10 µs, = 0 Surge current Verlustleistung Power dissipation Symbol Wert Value Einheit Unit A mW K/W

Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Wärmewiderstand Sperrschicht - Lötstelle bei RthJC Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 100 mA, 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax 100 mA Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Symbol peak

Kennwerte (TA = 25 °C) Characteristics (cont'd) Bezeichnung Parameter Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei = 100 mA, = 50 Switching times, e from to 90% and from = 100 mA, = 50 Kapazität, Capacitance = 1 MHz Durchlaßspannung, Forward voltage = 100 mA, 100 µs Sperrstrom, Reverse current 5 V Gesamtstrahlungsfluß, Total radiant flux = 100 mA, 20 ms Symbol Wert Value 0.5 Einheit Unit µs

Temperaturkoeffizient von VF, 100 mA Temperature coefficient of VF, 100 mA Temperaturkoeffizient von 100 mA Temperature coefficient 100 mA


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