Details, datasheet, quote on part number: SFH4301
CategoryOptoelectronics => Display => LEDs => LED Lamps
CompanyInfineon Technologies Corporation
DatasheetDownload SFH4301 datasheet
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Features, Applications

Schnelle IR-Lumineszenzdiode (950 nm) 3 mm Radial-Gehäuse High-Speed Infrared Emitter (950 nm) 3 mm Radial Package SFH 4301

Wesentliche Merkmale Hohe Pulsleistung und hoher Gesamtstrahlungsfluß e Sehr kurze Schaltzeiten (10 ns) Sehr hohe Langzeitstabilität Hohe Zuverlässigkeit Anwendungen Schnelle Datenübertragung mit Übertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) Analoge und digitale Hi-Fi Audio- und Videosignalübertragung Batteriebetriebene Geräte (geringe Stromaufnahme) Anwendungen mit hohen Zuverlässigkeits-ansprüchen bzw. erhöhten Anforderungen Alarm- und Sicherungssysteme IR Freiraumübertragung Typ Type SFH 4301 Bestellnummer Ordering Code Q62702-P5166

Features High pulse power and high radiant flux e Very short switching times (10 ns) Very high long-time stability High reliability

Applications High data transmission rate to 100 Mbaud (IR keyboard, Joystick, Multimedia) Analog and digital Hi-Fi audio and video signal transmission Low power consumption (battery) equipment Suitable for professional and high-reliability applications Alarm and safety equipment IR free air transmission

Gehäuse Package 3-mm-LED-Gehäuse (T1), schwarz eingefärbt, Anschlüsse 2.54-mm-Raster (1/10''), Kathodenkennung: längerer Anschluß 3 mm LED package (T1), black-colored epoxy resin, solder tabs lead spacing mm (1/10''), cathode marking: long lead

Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom Surge current = 10 µs, = 0 Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung, freie Beinchenlänge max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm Symbol Wert Value Einheit Unit mA A

Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength of peak emission = 100 mA, 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax = 100 mA, 20 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from to 90% and from = 100 mA, = 20 ms, = 50 Kapazität Capacitance = 1 MHz Durchlaspannung Forward voltage = 100 mA, 100 µs Sperrstrom Reverse current 3 V Gesamtstrahlungsfluß Total radiant flux = 100 mA, 20 ms Temperaturkoeffizient von Ie bzw. e Temperature coefficient 100 mA Symbol peak Wert Value 950 Einheit Unit nm


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