Details, datasheet, quote on part number: SFH4501
PartSFH4501
CategoryOptoelectronics => Display => LEDs => LED Lamps
DescriptionHigh-speed Infrared Emitter (950 Nm) in 5mm Radial Package
CompanyInfineon Technologies Corporation
DatasheetDownload SFH4501 datasheet
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Features, Applications

Schnelle IR-Lumineszenzdiode (950 nm) 5 mm Radial-Gehäuse High-Speed Infrared Emitter (950 nm) 5 mm Radial Package SFH 4501, SFH 4502, SFH 4503

Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Gute spektrale Anpassung an Si-Fotoempfänger Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb Sensorik Diskrete Lichtschranken Typ Type SFH 4501 SFH 4502 SFH 4503 Bestellnummer Gehäuse Ordering Code Package Q62702-P5062 Q62702-P5305

Features Very highly efficient GaAs-LED High reliability Spectral match with silicon photodetectors

Applications IR remote control of hi-fi and TV-sets, video tape recorders, dimmers Remote control for steady and varying intensity Sensor technology Discrete interrupters

(T 13/4), schwarz eingefärbt, Anschluß 2.54-mm-Raster (1/10''), Anodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 13/4), black-colored epoxy resin lens, solder tabs lead spacing mm (1/10''), anode marking: short lead

Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, = 10 µs, = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung, freie Beinchenlänge max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 100 mA, 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax 20 ms Abstrahlwinkel Half angle SFH 4501 SFH 4502 SFH 4503 Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Symbol peak Wert Value 950 Einheit Unit nm Symbol Wert Value Einheit Unit A mW K/W

Top; Tstg VR IF (DC) IFSM Ptot RthJA

Kennwerte (TA = 25 °C) Characteristics (cont'd) Bezeichnung Parameter Symbol Wert Value 10 Einheit Unit ns

Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei = 100 mA, = 20 ms, = 50 Switching times, e from to 90% and from = 100 mA, = 20 ms, = 50 Kapazität Capacitance = 1 MHz Durchlaßspannung, Forward voltage = 100 mA, 100 µs Sperrstrom, Reverse current 3 V Gesamtstrahlungsfluß, Total radiant flux = 100 mA, 20 ms Temperaturkoeffizient von Ie bzw. e,

Temperaturkoeffizient von VF, 100 mA Temperature coefficient of VF, 100 mA Temperaturkoeffizient von 100 mA Temperature coefficient 100 mA


 

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