Details, datasheet, quote on part number: SFH7222
CategoryOptoelectronics => Display => LEDs => LED Lamps
DescriptionSMT Multi Topled B Gaalas-infrared-emitter (880 Nm) And Green Gap-led (565 Nm)
CompanyInfineon Technologies Corporation
DatasheetDownload SFH7222 datasheet
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Features, Applications

GaAlAs-IR-Lumineszenzdiode (880 nm) und grüne GaP-LED (565 nm) GaAlAs-Infrared-Emitter (880 nm) and green GaP-LED (565 nm) SFH 7222

Wesentliche Merkmale SMT-Gehäuse mit IR-Sender (880 nm) und grünem Sender (565 nm) Geeignet für SMT-Bestückung Gegurtet lieferbar Sender und Empfänger getrennt ansteuerbar Geeignet für IR-Reflow Löten

Features SMT package with IR emitter (880 nm) and green emitter (565 nm) Suitable for SMT assembly Available on tape and reel Emitter und detector can be controlled separately Suitable for IR reflow soldering Applications Combination of display with: ­ data transmission ­ remote control ­ infrared interface Gehäuse Package SMT Multi TOPLED®

Anwendungen Kombination von Anzeigeelement mit: ­ Datenübertragung ­ Fernsteuerung ­ Infrarotschnittstelle Typ Type SFH 7222 Bestellnummer Ordering Code Q62702-P5095

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom Surge current tp 10 µs, = 0 Verlustleistung Total power dissipation Wärmewiderstand Thermal resistance junction/ambient1) Wärmewiderstand Thermal resistance junction/ambient2)

nur ein Chip betrieben / only one chip on beide Chips betrieben / both chips on

Hinweis/Notes Die angegebenen Grenzdaten gelten für einen Chip, wenn nicht anders angegeben. The stated maximum ratings refer to one chip, unless otherwise specified.

Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength of peak emission 100 mA Dominantwellenlänge Dominant wavelength 10 mA Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax 100 mA Abstrahlwinkel Half angle Abmessungen der aktiven Chipfläche Dimensions of the active chip area Schaltzeiten Switching times = 100 mA, = 50 Kapazität Capacitance = 1 MHz Durchlaspannung Forward voltage = 100 mA, 100 µs Sperrstrom, 5 V Reverse current Gesamtstrahlungsflu Total radiant flux = 100 mA, 20 ms Lichtstärke Luminous intensity 2 mA Temperaturkoeffizient von Ie bzw. e Temperature coefficient 100 mA


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