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Part: SN7000E6288
Category:
Description: N-channel Sipmos Small-signal Transistor
Company: Infineon Technologies Corporation
Datasheet: Download SN7000E6288 datasheet File size : 314 kB
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Datasheet text preview:
SN 7000
SIPMOS ® Small-Signal Transistor
· N channel · Enhancement mode · Logic Level
· VGS(th) = 0.8...2.0V
Pin 1 D
Type
Pin 2 G
Marking
Pin 3 S
VDS
60 V
ID
0.25 A
RDS(on)
5
Package
SN 7000
Type SN 7000 SN 7000
TO-92
SN 7000
Ordering Code Q62702-S638 Q62702-S637
Tape and Reel Information E6288 E6296
Maximum Ratings Parameter Symbol Values Unit
Drain source voltage Drain-gate voltage
RGS = 20 k
VDS V
DGR
60
V
60
VGS
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current
TA = 25 °C
± 20
Class 1 A 0.25
ID
DC drain current, pulsed
TA = 25 °C
IDpuls
1
Ptot
Power dissipation
TA = 25 °C
W 0.63
Data Sheet
1
05.99
SN 7000
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJA
-55 ... + 150 -55 ... + 150
°C
200
E 55 / 150 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 60 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
0.8
IDSS
1.4
2 µA
Zero gate voltage drain current
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
IGSS
0.1 -
1 5 nA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
RDS(on)
1
10
Drain-Source on-state resistance
VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.075 A
2 3 5 5.3
Data Sheet
2
05.99
SN 7000
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit
Transconductance
VDS 2 * ID * RDS(on)max, ID = 0.2 A
gfs
S 0.1 0.2 pF 60 80
Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
15
25
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
15
25 ns
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
tr
5
8
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
td(off)
5
8
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
tf
12
16
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
-
13
17
Data Sheet
3
05.99
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