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Part: SN7002
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: N-channel Sipmos Small-signal Transistor
Company: Infineon Technologies Corporation
Datasheet: Download SN7002 datasheet File size : 314 kB
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Datasheet text preview:
SN 7002
SIPMOS ® Small-Signal Transistor
· N channel · Enhancement mode · Logic Level
· VGS(th) = 0.8...2.0V
Pin 1 G
Pin 2 S
Pin 3 D
Type
VDS
60 V
ID
0.19 A
RDS(on)
5
Package
Marking
SN 7002
Type SN 7002
SOT-23
sSG
Ordering Code Q67000-S063
Tape and Reel Information E6327
Maximum Ratings Parameter Symbol Values Unit
Drain source voltage Drain-gate voltage
RGS = 20 k
VDS V
DGR
60
V
60
VGS
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current
TA = 25 °C
± 20
Class 1 A 0.19
ID
DC drain current, pulsed
TA = 25 °C
IDpuls
0.76
Ptot
Power dissipation
TA = 25 °C
W 0.36
Data Sheet
1
05.99
SN 7002
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate- reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJA RthJSR
-55 ... + 150 -55 ... + 150
°C
350 285
E 55 / 150 / 56
K/W
1) For package mounted on aluminium
15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 60 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
0.8
IDSS
1.4
2 µA
Zero gate voltage drain current
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
IGSS
0.1 -
1 5 nA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
RDS(on)
1
10
Drain-Source on-state resistance
VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.05 A
2 3 5 7.5
Data Sheet
2
05.99
SN 7002
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit
Transconductance
VDS 2 * ID * RDS(on)max, ID = 0.2 A
gfs
S 0.1 0.2 pF 60 80
Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
15
25
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
15
25 ns
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50
tr
5
8
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50
td(off)
5
8
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50
tf
12
16
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50
-
13
17
Data Sheet
3
05.99
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