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Details, datasheet, quote on part number:SN7002NE6433
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| Part: | SN7002NE6433 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Low Voltage |
| Description: | E.g. OptiMOS® |
| Company: | Infineon Technologies Corporation |
| Datasheet: | Download SN7002NE6433 datasheet File size : 117 kB |
| Request For quote: | Find where to buy SN7002NE6433
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Datasheet text preview:
Final data
SN7002N SIPMOS® Small-Signal-Transistor
Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated
Drain pin 3 Gate pin1 Source pin 2
Product Summary VDS RDS(on) ID 60 5 0.2
SOT-23
V A
Type SN7002N SN7002N
Package SOT-23 SOT-23
Ordering Code Q67042-S4185 Q67042-S4192
Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel
Marking sSN sSN
Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value 0.2 0.16
Unit A
Pulsed drain current
TA=25°C
ID puls dv/dt VGS Ptot Tj , Tstg
0.8 6 ±20 Class 1 0.36 -55... +150 55/150/56 W °C kV/µs V
Reverse diode dv/dt
IS=0.2A, VDS=48V, di/dt=200A/µs, T jmax=150°C
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-03-26
Final data
SN7002N
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint RthJA 350 K/W Symbol min. Values typ. max. Unit
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, ID=250µA
Symbol min. V(BR)DSS VGS(th) I DSS I GSS R DS(on) R DS(on) 60 0.8
Values typ. 1.4 max. 1.8
Unit
V
Gate threshold voltage, V GS = VDS
ID=26µA
Zero gate voltage drain current
VDS=60V, VGS =0, Tj=25°C VDS=60V, VGS =0, Tj=150°C
µA 3.9 2.5 0.1 5 10 7.5 5 nA
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.17A
Drain-source on-state resistance
VGS=10V, ID=0.5A
Page 2
2003-03-26
Final data
SN7002N
Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =48V, ID =0.5A, VGS =0 to 10V VDD =48V, ID =0.5A
Symbol
Conditions min.
Values typ. 0.17 34 7.2 2.8 2.4 3.2 5.3 3.6 max. 45 9.6 4.2 3.6 4.8 8 5.4
Unit
g fs C iss C oss C rss td(on) tr td(off) tf
VDS2*ID*RDS(on)max, ID=0.16A VGS=0, VDS=25V, f=1MHz
0.09 -
S pF
VDD=30V, VGS=10V, ID=0.5A, RG=6
ns
-
0.14 0.42 1 4.5
0.21 0.63 1.5 -
nC
V(plateau) VDD =48V, ID = 0.5 A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr
VGS=0, IF = I S VR=30V, IF =lS , diF/dt=100A/µs
IS
TA=25°C
-
0.83 14.2 5.9
0.2 0.8 1.2 21.3 8.8
A
V ns nC
Page 3
2003-03-26
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