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Details, datasheet, quote on part number:SN7002W
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Datasheet text preview:
Final data
SN7002W SIPMOS® Small-Signal-Transistor
Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated
Drain pin 3 Gate pin1 Source pin 2
Product Summary VDS RDS(on) ID 60 5 0.23
SOT-323
V A
Type SN7002W SN7002W
Package SOT-323 SOT-323
Ordering Code Q67042-S4186 Q67042-S4193
Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel
Marking sSN sSN
Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value 0.23 0.18
Unit A
Pulsed drain current
TA=25°C
ID puls dv/dt VGS Ptot Tj , Tstg
0.92 6 ±20 Class 1 0.5 -55... +150 55/150/56 W °C kV/µs V
Reverse diode dv/dt
IS=0.23A, VDS =48V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-04-03
Final data
SN7002W
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint RthJS 250 K/W Symbol min. Values typ. max. Unit
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, ID=250µA
Symbol min. V(BR)DSS VGS(th) I DSS I GSS R DS(on) R DS(on) 60 0.8
Values typ. 1.4 max. 1.8
Unit
V
Gate threshold voltage, V GS = VDS
ID=26µA
Zero gate voltage drain current
VDS=60V, VGS =0, Tj=25°C VDS=60V, VGS =0, Tj=150°C
µA 4.1 2.3 0.1 5 10 7.5 5 nA
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.2A
Drain-source on-state resistance
VGS=10V, ID=0.23A
Page 2
2003-04-03
Final data
SN7002W
Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =48V, ID =0.23A, VGS =0 to 10V VDD =48V, ID =0.23A
Symbol
Conditions min.
Values typ. 0.21 34 7.2 3 2.4 2.8 6 8.5 max. 45 9.6 4.5 3.6 4.2 9 12.75
Unit
g fs C iss C oss C rss td(on) tr td(off) tf
VDS2*ID*RDS(on)max, ID=0.18A VGS=0, VDS=25V, f=1MHz
0.1 -
S pF
VDD=30V, VGS=10V, ID=0.23A, RG =6
ns
-
0.11 0.42 1 3.4
0.17 0.63 1.5 -
nC
V(plateau) VDD =48V, ID = 0.23 A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr
VGS=0, IF=0.23A VR=30V, IF =lS , diF/dt=100A/µs
IS
TA=25°C
-
0.85 10.8 3.2
0.23 0.92 1.2 16.2 4.8
A
V ns nC
Page 3
2003-04-03
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