|
|
Part: SPI07N60S5
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: For Lowest Conduction Losses
Company: Infineon Technologies Corporation
Datasheet: Download SPI07N60S5 datasheet File size : 456 kB
Request For quote: Find where to buy SPI07N60S5
Datasheet text preview:
Final data
SPP07N60S5, SPB07N60S5 SPI07N60S5
VDS RDS(on) ID 600 0.6 7.3 V A
Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Worldwide best R DS(on) in TO 220 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved noise immunity
P-TO262
P-TO263-3-2
P-TO220-3-1
Type SPP07N60S5 SPB07N60S5 SPI07N60S5
Package P-TO220-3-1 P-TO263-3-2 P-TO262
Ordering Code Q67040-S4172 Q67040-S4185 Q67040-S4328
Marking 07N60S5 07N60S5 07N60S5
Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 7.3 4.6
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =-A, VDD=50V
ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg
14.6 230 0.5 7.3 6 ±20 83 -55... +150 A V/ns V W °C mJ
Avalanche energy, repetitive tAR limited by Tjmax 1)
ID =7.3A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt
IS =7.3A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C
Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature
Page 1
2002-11-04
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold RthJC RthJA RthJA
SPP07N60S5, SPB07N60S5 SPI07N60S5
Symbol min. -
Values typ. 35 0.67 max. 1.5 62 62 260
Unit
K/W
W/K °C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =0.25mA
V(BR)DSS V(BR)DS VGS(th) IDSS
600 3.5
700 4.5
5.5
V
Drain-source avalanche breakdown voltage
VGS =0V, ID =7.3A
Gate threshold voltage, VGS = VDS
ID =350µA
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C
µA 0.5 0.54 19 1 100 100 0.6 nA
Gate-source leakage current
VGS =20V, VDS=0V
IGSS RDS(on) RG
-
Drain-source on-state resistance
VGS =10V, ID=4.6A, Tj =25°C
Gate input resistance f = 1 MHz, open drain
1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2002-11-04
Final data
SPP07N60S5, SPB07N60S5 SPI07N60S5
Values min. typ. 4 970 370 10 30 55 120 40 170 20 max. 255 30 ns pF S pF Unit
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =350V, ID =7.3A, VGS =0 to 10V VDD =350V, ID =7.3A
Symbol
Conditions
g fs Ciss Coss Crss
V DS2*I D*R DS(on)max, ID=4.6A V GS=0V, V DS=25V, f=1MHz
-
Effective output capacitance, 1) Co(er)
V GS=0V, V DS=0V to 480V
t d(on) tr t d(off) tf
V DD=350V, V GS=0/10V, ID=7.3A, RG=12
-
-
7.5 16.5 27 8
35 -
nC
V(plateau) VDD =350V, ID =7.3A
V
1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Page 3
2002-11-04
Others parts begin by sp
SP-1 SP-2 SP-3 SP-4 SP-5 SP-6 SP-7 SP-8 SP-9 SP-10 SP-11 SP-12 SP-13 SP-14 SP-15 SP-16 SP-17 SP-18 SP-19 SP-20 SP-21 SP-22 SP-23 SP-24 SP-25 SP-26 SP-27 SP-28 SP-29 SP-30 SP-31 SP-32
|
|
|
