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Part: SPI100N03S2L-03
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: E.g. OptiMOS®
Company: Infineon Technologies Corporation
Datasheet: Download SPI100N03S2L-03 datasheet File size : 456 kB
Request For quote: Find where to buy SPI100N03S2L-03
Datasheet text preview:
SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03
OptiMOS® Buck converter series
Feature
· N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 2.7 100
P- TO220 -3-1
V m A
· Enhancement mode · Logic Level · Excellent Gate Charge x RDS(on) P- TO262 -3-1 product (FOM)
· Superior thermal resistance
· 175°C operating temperature · Avalanche rated · dv/dt rated
Type Package Ordering Code SPP100N03S2L-03 P- TO220 -3-1 Q67042-S4056 SPB100N03S2L-03 P- TO263 -3-2 Q67042-S4055 SPI100N03S2L-03 P- TO262 -3-1 Q67042-S4094
Marking PN03L03 PN03L03 PN03L03
Value 100 100 Unit A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
I D puls EAS EAR dv/dt VGS Ptot T j , Tstg
400 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80 , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-08-12
SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
Symbol min. RthJC R thJA R thJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, I D=1mA
Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = VDS
ID = 250 µA
Zero gate voltage drain current
V DS=30V, V GS=0V, Tj=25°C V DS=30V, V GS=0V, Tj=125°C
µA 0.01 1 1 1 100 100 nA m 2.8 2.5 2.2 1.9 3.7 3.4 3 2.7
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, ID=80A V GS=4.5V, ID=80A, SMD version
Drain-source on-state resistance
V GS=10V, ID=80A V GS=10V, ID=80A, SMD version
1Current limited by bondwire ; with an R thJC = 0.5K/W the chip is able to carry I D= 245A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2002-08-12
SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg
V DD=24V, ID=100A, V GS=0 to 10V V DD=24V, ID=100A
Symbol
Conditions min.
Values typ. 192 6160 2400 540 15 67 83 65 max. -
Unit
g fs C iss C oss C rss t d(on) tr t d(off) tf
V DS2*I D*RDS(on)max, ID=100A V GS=0V, V DS=25V, f=1MHz
81 -
S
8180 p F 3200 810 23 100 125 98 ns
V DD=15V, VGS=10V, ID=100A, RG=1.1
-
19 57 166 3.1
26 86 220 -
nC
V(plateau) V DD=24V, ID=100A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VS D trr Qrr
VGS =0V, IF=80A VR =15V, IF =lS , diF/dt=100A/µs
IS
TC=25°C
-
0.9 86 100
100 400 1.3 108 125
A
V ns nC
Page 3
2002-08-12
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