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Part: SPI11N60C3SMD
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description:
Company: Infineon Technologies Corporation
Datasheet: Download SPI11N60C3SMD datasheet File size : 456 kB
Request For quote: Find where to buy SPI11N60C3SMD
Datasheet text preview:
Preliminary data
SPP11N60C3, SPB11N60C3 SPI11N60C3
Cool MOSTM=Power Transistor =
Feature ·=New revolutionary high voltage technology · Worldwide best R DS(on) in TO 220 · Ultra low gate charge ·=Periodic avalanche rated · Extreme dv/dt rated ·=High peak current capability ·=Improved transconductance ·=150 °C operating temperature
P-TO262-3-1
C OLMOS O
Power Semiconductors
Product Summary VDS @ Tjmax RDS(on) ID
P-TO263-3-2
650 0.38 11
V A
P-TO220-3-1
Type SPP11N60C3 SPB11N60C3 SPI11N60C3
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67040-S4395 Q67040-S4396 Q67042-S4403
Marking 11N60C3 11N60C3 11N60C3
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 11 7
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =5.5A, VDD =50V
ID puls EAS EAR IAR dv/dt VGS VGS Ptot Tj , Tstg
Page 1
33 340 0.6 11 6 ±20 ±30 125 -55... +150 W °C A V/ns V mJ
Avalanche energy, repetitive tAR limited by Tjmax 1)
ID =11A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt
IS =11A, VDS <=VDD, di/dt=100A/µs, Tjmax =150°C
Gate source voltage static Gate source voltage dynamic Power dissipation, TC = 25°C Operating and storage temperature
2001-07-05
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold RthJC RthJA RthJA
SPP11N60C3, SPB11N60C3 SPI11N60C3
Symbol min. -
Values typ. 35 max. 1 62 62 1 260
Unit
K/W
W/K °C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =0.25mA
V(BR)DSS V(BR)DS VGS(th) IDSS
600 2.1
700 3
3.9
V
Drain-source avalanche breakdown voltage
VGS =0V, ID =11A
Gate threshold voltage, VGS = VDS
ID = 0.5 mA
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C
µA 25 250 100 nA 0.34 1.1 0.86 0.38 1.22 -
Gate-source leakage current
VGS =20V, VDS=0V
IGSS RDS(on)
-
Drain-source on-state resistance
VGS =10V, ID=7A, Tj=25°C VGS =10V, ID=7A, Tj=150°C
Gate input resistance f = 1 MHz, open drain
RG
-
1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2001-07-05
Preliminary data
SPP11N60C3, SPB11N60C3 SPI11N60C3
Values min. typ. 8.3 1460 610 21 45 85 10 5 44 5 max. 70 9 ns pF S pF Unit
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =480V, ID =11A, VGS =0 to 10V VDD =480V, ID =11A
Symbol
Conditions
g fs Ciss Coss Crss
V DS2*I D*R DS(on)max , ID=7A V GS=0V, V DS=25V, f=1MHz
-
Effective output capacitance, 1) Co(er)
V GS=0V, V DS=0V to 480V
t d(on) tr t d(off) tf
V DD=380V, V GS=0/10V, ID=11A, R G=6.8
-
-
5.5 22 45 5.5
60 -
nC
V(plateau) VDD =480V, ID =11A
V
1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Page 3
2001-07-05
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