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Details, datasheet, quote on part number: SPW32N50C3
CategoryDiscrete => Transistors
DescriptionCool MOS Power Transistor
CompanyInfineon Technologies Corporation
DatasheetDownload SPW32N50C3 datasheet
QuoteFind where to buy SPW32N50C3


Features, Applications

Feature· New revolutionary high voltage technology· Ultra low gate charge· Periodic avalanche rated· Extreme dv/dt rated· Ultra low effective capacitances· Improved transconductance

Maximum Ratings Parameter Symbol ID Value Unit
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse

Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage (f >1Hz)

Maximum Ratings Parameter Drain Source voltage slope

Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current 500 2.1 Values typ. max. µA nA

Electrical Characteristics = 25 °C, unless otherwise specified Parameter
Transconductance Input capacitance Output capacitance Reverse transfer capacitance

Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related

Turn-on delay time Rise time Turn-off delay time Fall time

Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while DS is rising from 80% V DSS.

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