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Details, datasheet, quote on part number:W24258S-70LI
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Datasheet text preview:
W24258 32K × 8 CMOS STATIC RAM
GENERAL DESCRIPTION
The W24258 is a normal speed, very low power CMOS static RAM organized as 32768 × 8 bits that operates on a wide voltage range from 2.7V to 5.5V power supply. The W24258 family, W2425870LE and W24258-70LI, can meet requirement of various operating temperature. This device is manufactured using Winbond's high performance CMOS technology.
FEATURES
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Low power consumption: - Active: 350 mW (max.) - Standby: 6 µW (max.)/3V 25 µW (max.)/5V Access time: 70 nS (max.)/5V 100 nS (max.)/3V Single 3V/5V power supply Fully static operation
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All inputs and outputs directly TTL compatible Three-state outputs Battery back-up operation capability Data retention voltage: 2V (min.) Packaged in 28-pin 600 mil DIP, 330 mil SOP and standard type one TSOP (8 mm × 13.4 mm)
PIN CONFIGURATIONS
BLOCK DIAGRAM
CLK GEN. A12 A14 A2 R O W D E C O D E R PRECHARGE CKT.
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS
1 2 3 4 5 6 7 8 9 10 11 12 13 14 28-pin DIP
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VDD WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4
A3 A4 A5 A6 A7 A13 I/O1 I/O8
CORE CELL ARRAY 512 ROWS 64 X 8 COLUMNS
DATA CNTRL. CLK GEN.
I/O CKT. COLUMN DECODER
WE CS OE
A11 A10 A1 A0 A8 A9
PIN DESCRIPTION
OE A11 A9 A8 A13 WE VDD A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2
SYMBOL A0-A14 I/O1-I/O8 CS WE OE VDD VSS
28-pin TSOP
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Select Input Write Enable Input Output Enable Input Power Supply Ground
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Publication Release Date: November 1998 Revision A8
W24258
TRUTH TABLE
CS H L L L OE X H L X WE X H H L MODE Not Selected Output Disable Read Write I/O1- I/O8 High Z High Z Data Out Data In VDD CURRENT ISB, ISB1 I DD I DD I DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER Supply Voltage to VSS Potential Input/Output to VSS Potential Allowable Power Dissipation Storage Temperature Operating Temperature LE LI RATING -0.5 to +7.0 -0.5 to VDD +0.5 1.0 -65 to +150 -20 to 85 -40 to 85 UNIT V V W °C °C °C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.
Operating Characteristics
(VDD = 5V ±10%; VDD = 3V ±10%; VSS = 0V; TA (°C) = -20 to 85 for LE; -40 to 85 for LI)
PARAMETER Input Low Voltage Input High Voltage Input Leakage Current Output Leakage Current
SYM. VIL VIH ILI ILO
TEST CONDITIONS VIN = VSS to VDD VI/O = VSS to VDD, CS = VIH (min.) or OE = VIH (min.) or WE = VIL (max.)
5V ±10% MIN. -0.5 +2.2 -1 -1 MAX. +0.8 VDD +0.5 +1 +1
3V ±10% MIN. -0.5 +2.0 -1 -1 MAX. +0.6 VDD +0.5 +1 +1
UNIT V V µA µA
Output Low Voltage Output High Voltage
VOL VOH
IOL = +2.1 mA IOH = -1.0 mA
2.4
0.4 -
2.2
0.4 -
V V
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W24258
Operating Characteristics, continued
PARAMETER
SYM.
TEST CONDITIONS
MIN.
5V ±10%
TYP.
3V ±10%
UNIT
MAX. MIN. TYP. MAX.
Operating Power Supply Current Standby Power Supply Current
I DD
CS = VIL (max.), I/O = 0 mA, Cycle = min., Duty = 100% CS = VIH (min.), Cycle = min., Duty = 100% CS VDD -0.2V
-
-
70
-
-
30
mA
ISB
-
-
3
-
-
1
mA
ISB1
-
0.7
5
-
0.5
2
µA
Note: Typical parameter is measured under ambient temperature TA = 25° C and VDD = 5V / 3V.
CAPACITANCE
(VDD = 5V, TA = 25° C, f = 1 MHz)
PARAMETER Input Capacitance Input/Output Capacitance
SYM. CIN CI/O
CONDITIONS VIN = 0V VOUT = 0V
MAX. 6 8
UNIT pF pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load CONDITIONS 3V ±10%, 0V to 2.4V 5V ±10%, 0V to 3.0V 5 nS 1.5V See the drawing below
AC Test Loads and Waveform
1 TTL OUTPUT 100 pF Including Jig and Scope OUTPUT 5 pF Including Jig and Scope (For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ, TOW ) 2.4V/3.0V 0V 5 nS 90% 10% 90% 10% 5 nS 1 TTL
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Publication Release Date: November 1998 Revision A8
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