|Category||Memory => SRAM => Async. SRAM|
|Description||5V 2K X 8 CMOS Asynchronous Static RAM|
|Company||Integrated Device Technology, Inc.|
|Datasheet||Download 6116LA datasheet
High-speed access and chip select times Military: 20/25/35/45/55/70/90/120/150ns (max.) Industrial: 20/25/35/45ns (max.) Commercial: 15/20/25/35/45ns (max.) Low-power consumption Battery backup operation 2V data retention voltage (LA version only) Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Input and output directly TTL-compatible Static operation: no clocks or refresh required Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip, 24-pin SOIC and 24-pin SOJ Military product compliant to MIL-STD-833, Class BDescription
The a 16,384-bit high-speed static RAM organized It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby power mode, as long as CS remains HIGH. This capability provides significant system level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only to 4µW operating off a 2V battery. All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. The IDT6116SA/LA is packaged 24-pin 600 and 300 mil plastic or ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing high board-level packing densities. Military grade product is manufactured in compliance to the latest version of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 0V VOUT = 0V Max. 8 Unit pFNOTE: 1. This parameter is determined by device characterization, but is not production tested.
Name WE OE VCC GND Description Address Inputs Data Input/Output Chip Select Write Enable Output Enable Power Ground
Rating Terminal Voltage with Respect to GND Operating Temperature Under Bias Storage Temperature Power Dissipation DC Output Current
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC +0.5V.Mode Standby Read Write OE WE I/O High-Z DATA OUT High-Z DATA IN
Grade Military Industrial Commercial Ambient Temperature to +70OC GND 0V Vcc ± 10%
Symbol VCC GND VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min.
NOTES: 1. VIL (min.) = 3.0V for pulse width less than 20ns, once per cycle. 2. VIN must not exceed VCC +0.5V.
Symbol |ILI| |ILO| VOL VOH IDT6116SA Parameter Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Test Conditions VCC = Max., VIN = GND to VCC = Max., CS = VIH, VOUT = GND V CC IOL = 8mA, VCC = Min. IOH = -4mA, VCC = Min. MIL. COM'L. MIL. COM'L. Min.
6116SA15 Symbol ICC1 Parameter Operating Power Supply Current CS < VIL, Outputs Open VCC = Max., = 0 Dynamic Operating Current CS < VIL, Outputs Open VCC = Max., = fMAX(2) Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., = fMAX(2) Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., VIN < VLC or VIN > VHC, = 0 Power SA LA Com'l Only 6116SA20 6116LA20 Com'l & Ind Mil 6116SA25 6116LA25 Com'l & Ind Mil 6116SA35 6116LA35 Com'l. & Ind. Mil
NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are cycling at fMAX, = 0 means address inputs are not changing.
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