|Category||Memory => SRAM => Async. SRAM|
|Description||16K X 1 Static RAM|
|Company||Integrated Device Technology, Inc.|
|Datasheet||Download 6167SA datasheet
High-speed (equal access and cycle time) Military: 25/35/45/55/70/85/100ns (max.) Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation 2V data retention voltage (IDT6167LA only) Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Separate data input and output Military product compliant to MIL-STD-883, Class B high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW operating off a 2V battery. All inputs and the output of the IDT6167 are TTL-compatible and operate from a single 5V supply, thus simplifying system designs. The IDT6167 is packaged in a space-saving 20-pin, 300 mil Plastic DIP or CERDIP and a Plastic 20-pin providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.Description
The a 16,384-bit high-speed static RAM organized x 1. The part is fabricated using IDT's high-performance,
Symbol VTERM Rating Terminal Voltage with Respect to GND Operating Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Com'l. to +7.0 Mil. to +7.0 Unit V
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.Description Address Inputs Chip Select Write Enable Power DATAIN DATAOUT Ground
Symbol CIN COUT Parameter(1) Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 7 Unit pFNOTE: 1. This parameter is determined by device characterization, but is not production tested.
Mode Standby Read Write H L Output High-Z DATAOUT High-Z Power Standby Active
Symbol VCC GND VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min.
NOTE: 1. VIL (min.) = 3.0V for pulse width less than 20ns, once per cycle.
6167SA/LA15 Symbol ICC1 Parameter Operating Power Supply Current CS < VIL, Outputs Open VCC = Max., = 0(3) Dynamic Operating Current CS < VIL, Outputs Open VCC = Max., = fMAX(3) Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., = fMAX(3) Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., VIN > VHC or VIN < VLC, = 0(3) Power SA LA Com'l. 6167SA/LA20 Com'l. 6167SA/LA25 Com'l. Mil.
6167SA/LA35(2) Symbol ICC1 Parameter Operating Power Supply Current CS < VIL, Outputs Open VCC = Max., = 0(3) Dynamic Operating Current CS < VIL, Outputs Open VCC = Max., = fMAX(3) Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., = fMAX(3) Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., VIN > VHC or VIN < VLC, = 0(3) Power SA LA Mil. 6167SA/LA45(2) Mil. 6167SA/LA55(2) Mil. 6167SA/LA70(2) Mil.
NOTES: 1. All values are maximum guaranteed values. to +125°C temperature range only. Also available; 85ns and 100ns Military devices. 3. fMAX = 1/tRC, only address inputs cycling at fMAX. = 0 means no address inputs change.
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