Details, datasheet, quote on part number: 6168LA
Part6168LA
CategoryMemory => SRAM => Async. SRAM
Description5V, 4k X 4, CMOS, Asynchronous, Static RAM
CompanyIntegrated Device Technology, Inc.
DatasheetDownload 6168LA datasheet
  

 

Features, Applications
Features

High-speed (equal access and cycle time) Military: 25/45ns (max.) Industrial: 25ns (max.) Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation--2V data retention voltage (IDT6168LA only) Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC) Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Bidirectional data input and output Military product compliant to MIL-STD-883, Class B

Description

The a 16,384-bit high-speed static RAM organized It is fabricated using lDT's high-performance, high-reliability

CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1W operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply. The IDT6168 is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP a 20-pin LCC providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

Mode H L Output High-Z DOUT DIN Power Standby Active

Symbol Rating Terminal Voltage with Respect to GND Operating Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Com'l. to +7.0 Mil. to +7.0 Unit V

Name - I/O3 VCC GND Description Address Inputs Chip Select Write Enable Data Input/Output Power Ground

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Symbol VCC GND Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. Typ. 5.0 0

Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 0V VOUT = 0V Max. 7 Unit pF

NOTE: 1. VIL (min.) = 3.0V for pulse width less than 20ns, once per cycle.
NOTE: 1. This parameter is determined by device characterization, but is not production tested.

6168SA15 Power Symbol ICC1 Parameter Operating Power Supply Current CS < VIL, Outputs Open CC = Max., = 0(2) Dynamic Operating Current CS < VIL, Outputs Open CC = Max., = fMAX(2) Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open CC = Max., = fMAX(2) Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., IN < VLC or VIN > VHC, LA 110



NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are cycling at fMAX. = 0 means no address inputs are changing.

Symbol |ILI| |ILO| VOL IDT6168SA Parameter Input Leakage Current Output Leakage Current Output LOW Voltage Test Conditions VCC = Max., VIN = GND to VCC = Max., CS = VIH, VOUT = GND V CC IOL = 10mA, VCC = Min. IOL = 8mA, VCC = Min. VOH Output HIGH Voltage IOH = -4mA, VCC = Min. MIL. COM'L. MIL. COM'L. Min.


 

Related products with the same datasheet
IDT6168LA15PC
IDT6168LA20DB
IDT6168LA20LB
IDT6168LA20P
IDT6168LA20PB
IDT6168LA25DB
IDT6168LA25LB
IDT6168LA25P
IDT6168LA25PB
IDT6168LA35LB
IDT6168LA35P
IDT6168LA35PB
Some Part number from the same manufacture Integrated Device Technology, Inc.
6168SA 5V, 4K X4, CMOS, Asynchronous, Static RAM
7005 8K X 8 Dual-port RAM
7006 16 K X 8 Dual-port RAM
7007 32K X 8 Dual-port RAM
7008 64K X 8 Dual-port RAM
7009 128K X 8 Dual-port RAM
70121 2K X 9 Dual-port RAM
70125
7014 4K X 9 Dual-port RAM
7015 8K X 9 Dual-port RAM
7016 16K X 9 Dual-port RAM
7018 64K x9 Dual-port RAM
7019 128K x9 Dual-port RAM
7024 4K X 16 Dual-port RAM
7025 8K X 16 Dual-port RAM
7026 16K X 16 Dual-port RAM
70261 16K X 16 Dual-port RAM W/int
7027 32K X 16 Dual-port RAM
7028 64K X16 Dual-port RAM
7034 4K X 18 Dual-port RAM
7035 8K X 18 Dual-port RAM
Same catergory

24FC65-IP : 64k 5.0v 1 MHZ i 2 C Smart Serial EePROM. Voltage operating range: 5.5V - Maximum write current 5.5V - Maximum read current 5.5V - Standby current 1 A typical 1 MHz SE2.bus two wire protocol Up to eight devices may be connected to the same bus for to 512K bits total memory Programmable block security options Programmable endurance options Schmitt trigger inputs for noise suppression Self-timed.

CY7C451-14JC : 5V SYNC Fifo. High-speed, low-power, first-in first-out (FIFO) memories (CY7C454) 0.65 micron CMOS for optimum speed/power High-speed 83-MHz operation (12 ns read/write cycle time) Low power ICC=70 mA Fully asynchronous and simultaneous read and write operation Empty, Full, Half Full, and programmable Almost Empty and Almost Full status flags TTL compatible Retransmit.

HM5257165B : 512m LVTTL Interface Sdram 133 Mhz/100 MHZ 8-mword 16-bit 4-bank/16-mword 8-bit 4-bank /32-mword 4-bit 4-bank Pc/133, Pc/100 Sdram.

HT23C040 : CMOS 512Kx8-bit Mask ROM. Operating voltage: 2.7V~5.5V Low power consumption Operation: 25mA max. CC=5V) 10mA max. (VCC=3V) Standby: 30mA max. CC=5V) 10mA max. (VCC=3V) Access time: 120ns max. (VCC=5V) 250ns max. (VCC=3V) 5242888-bit of mask ROM Mask option: chip enable CE/CE/OE1/OE1, and output enable OE/OE/NC TTL compatible inputs and outputs Tristate outputs Fully static.

HYMD1326458 : 256 MB. 32Mx64 Unbuffered DDR Sdram Dimm. Hynix HYMD1326458-H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD1326458-H/L series consists of sixteen 16Mx8 DDR SDRAM in 400mil TSOP II packages a 184pin glass-epoxy substrate. Hynix HYMD1326458-H/L series provide a high performance.

IS62C1024L : . High-speed access time: ns Low active power: 450 mW (typical) Low standby power: 150 W (typical) CMOS standby Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V (10%) power supply The is a low by 8-bit CMOS static RAM.

K6X0808C1D : = K6X0808C1D 32Kx8 Bit Low Power Full CMOS Static RAM ;; Organization = 32Kx8 ;; Vcc(V) = 4.5~5.5 ;; Speed-tAA(ns) = 55,70 ;; Operating Temperature = C,i ;; Operating Current(mA) = 35 ;; Standby Current(uA) = 25 ;; Package = 28DIP,28SOP,28TSOP1 ;; Production Status = Customer Sample ;; Comments = Product.

KM48V8104BS : Unbuffered DIMM. = KMM374F803BK 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V ;; Density(MB) = 64 ;; Organization = 8Mx72 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (8Mx8)*9+EEPROM ;; Production Status = Eol ;; Comments = Ecc,unbuffered.

LH28F008SCHR-L85 : 8M Smart Voltage Flash Memory.

M366S1723ATS : Unbuffered DIMM. = M366S1723ATS 16M X 64 Sdram Dimm Based on 16M X 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 128 ;; Organization = 16Mx64 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,80,1H,1L ;; #of Pin = 168 ;; Power = C ;; Component Composition = (16Mx8)x8+EEPROM ;; Production Status = Eol ;; Comments.

M390S2858ETU : Registered DIMM. = M390S2858ETU 168Pin Registered Dimm Based on 256Mb E-die (x4, X8) ;; Density(MB) = 1024 ;; Organization = 128Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 7A ;; #of Pin = 168 ;; Power = C ;; Component Composition = St.(128Mx4)x18+EEPROM ;; Production Status = Mass Production ;; Comments = -.

M53620412CB0 : SIMM. = M53620412CW0 4MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx4)x8 ;; Production Status = Eol ;; Comments = Solder.

ST25W02 : 2 Kb. Serial EePROM I(2)c-bus, 2.5v to 5.5v, With-byte/page Write: 256x8.

GS8162Z72CGC-333T : 256K X 72 ZBT SRAM, 4.5 ns, PBGA209. s: Memory Category: SRAM Chip ; Density: 18874 kbits ; Number of Words: 256 k ; Bits per Word: 72 bits ; Package Type: BGA, 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209 ; Pins: 209 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 4.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

24LC65/PB40 : 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8. s: Density: 66 kbits ; Number of Words: 8 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 0 MHz ; Logic Family: CMOS ; Supply Voltage: 5V ; Package Type: 0.300 INCH, PLASTIC, DIP-8, DIP ; Pins: 8 ; Operating Range: Commercial ; Operating Temperature: 0 to 70 C (32 to 158 F).

 
0-C     D-L     M-R     S-Z