Details, datasheet, quote on part number: 6168LA
CategoryMemory => SRAM => Async. SRAM
Description5V, 4k X 4, CMOS, Asynchronous, Static RAM
CompanyIntegrated Device Technology, Inc.
DatasheetDownload 6168LA datasheet


Features, Applications

High-speed (equal access and cycle time) Military: 25/45ns (max.) Industrial: 25ns (max.) Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation--2V data retention voltage (IDT6168LA only) Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC) Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Bidirectional data input and output Military product compliant to MIL-STD-883, Class B


The a 16,384-bit high-speed static RAM organized It is fabricated using lDT's high-performance, high-reliability

CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1W operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply. The IDT6168 is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP a 20-pin LCC providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

Mode H L Output High-Z DOUT DIN Power Standby Active

Symbol Rating Terminal Voltage with Respect to GND Operating Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Com'l. to +7.0 Mil. to +7.0 Unit V

Name - I/O3 VCC GND Description Address Inputs Chip Select Write Enable Data Input/Output Power Ground

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Symbol VCC GND Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. Typ. 5.0 0

Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 0V VOUT = 0V Max. 7 Unit pF

NOTE: 1. VIL (min.) = 3.0V for pulse width less than 20ns, once per cycle.
NOTE: 1. This parameter is determined by device characterization, but is not production tested.

6168SA15 Power Symbol ICC1 Parameter Operating Power Supply Current CS < VIL, Outputs Open CC = Max., = 0(2) Dynamic Operating Current CS < VIL, Outputs Open CC = Max., = fMAX(2) Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open CC = Max., = fMAX(2) Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., IN < VLC or VIN > VHC, LA 110

NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are cycling at fMAX. = 0 means no address inputs are changing.

Symbol |ILI| |ILO| VOL IDT6168SA Parameter Input Leakage Current Output Leakage Current Output LOW Voltage Test Conditions VCC = Max., VIN = GND to VCC = Max., CS = VIH, VOUT = GND V CC IOL = 10mA, VCC = Min. IOL = 8mA, VCC = Min. VOH Output HIGH Voltage IOH = -4mA, VCC = Min. MIL. COM'L. MIL. COM'L. Min.


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7014 4K X 9 Dual-port RAM
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7027 32K X 16 Dual-port RAM
7028 64K X16 Dual-port RAM
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