Details, datasheet, quote on part number: 74ALVC1G07
CompanyIntegrated Device Technology, Inc.
DatasheetDownload 74ALVC1G07 datasheet


Features, Applications


MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method > 200V using machine model = 0) VCC 0.3V, Normal Range VCC to 3.6V, Extended Range VCC 0.2V CMOS power levels (0.4 W typ. static) Rail-to-Rail output swing for increased noise margin Available in PSOP package

This buffer/driver is built using advanced dual metal CMOS technology. The outputs of the ALVC1G07 device are open-drain and can be connected to other open-drain outputs to implement active-low wired-OR or active-high wired-AND functions. The maximum sink current is 24mA. The ALVC1G07 has been designed with a 24mA output driver. This driver is capable of driving a moderate to heavy load while maintaining speed performance.

Drive Features for ALVC1G07: High Output Drivers: 24mA Suitable for heavy loads
3.3V High Speed Systems 3.3V and lower voltage computing systems
Pin Names Y NC Description Data Input Data Output No Internal Connection
NOTE: H = HIGH Voltage Level L = LOW Voltage Level

Symbol VTERM(2) VTERM(3) TSTG IOUT IIK IOK ICC ISS Description Terminal Voltage with Respect to GND Max. + 4.6

Symbol CIN COUT CI/O Parameter(1) Input Capacitance Output Capacitance I/O Port Capacitance Conditions VIN = 0V VOUT = 0V VIN = 0V Typ. 5 7 Max. 7 9 Unit pF

Terminal Voltage with Respect to GND 0.5 to VCC + 0.5 Storage Temperature 150 DC Output Current Continuous Clamp Current, VI > VCC Continuous Clamp Current, < 0 Continuous Current through each VCC or GND 50 to

NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VCC terminals. 3. All terminals except VCC.

Following Conditions Apply Unless Otherwise Specified: Operating Condition: to +85C, VCC to 3.6V

Symbol VIH Parameter Input HIGH Voltage Level VCC Test Conditions to 1.95V Min. 0.65 x VCC VI = VCC VI = GND VO = VCC VO = GND VCC = 2.3V, IIN 18mA VCC = 3.3V VCC = 3.6V VIN = GND or VCC One input at VCC - 0.6V, other inputs at VCC or GND Typ.(1) Max. 0.35 x VCC A V Unit V

VCC to 2.7V VCC to 3.6V VIL Input LOW Voltage Level VCC to 1.95V VCC to 2.7V VCC to 3.6V IIH IIL IOZH IOZL VIK VH ICCL ICCH ICCZ ICC Input HIGH Current Input LOW Current High Impedance Output Current (3-State Output pins) Clamp Diode Voltage Input Hysteresis Quiescent Power Supply Current VCC = 3.6V VCC = 3.6V VCC = 3.6V

Symbol VOL Parameter Output LOW Voltage Test Conditions(1) VCC to 3.6V IOL = 0.1mA VCC = 1.65V VCC = 2.3V VCC = 2.7V VCC = 3.0V IOL = 4mA IOL = 6mA IOL = 12mA IOL = 12mA IOL = 24mA Min. Max. Unit V

NOTE: 1. VIH and VIL must be within the min. or max. range shown in the DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE table for the appropriate VCC range. + 85C.

VCC 0.15V Symbol CPD Parameter Power Dissipation Capacitance Test Conditions = 10Mhz Typical 4 VCC 0.2V Typical 5 VCC 0.3V Typical 6 Unit pF

VCC 0.15V Symbol tPLZ to Y tPZL Parameter Min. 1 Max. 6 VCC 0.2V Min. 0.5 Max. 3 VCC = 2.7V Min. Max. 3.3 VCC 0.3V Min. 1 Max. 2.8 Unit ns


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