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Part: 74FCT16827T

Category:
 Logic

Description: 20-Bit Buffer

Company: Integrated Device Technology, Inc.

Datasheet: Download 74FCT16827T datasheet     File size : 180 kB

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Datasheet text preview:
IDT74FCT16827AT/CT FAST CMOS 20-BIT BUFFER

INDUSTRIAL TEMPERATURE RANGE

FAST CMOS 20-BIT BUFFER

IDT74FCT16827AT/CT

FEATURES:
· · · · · · · ·

0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1µA (max.) VCC = 5V ±10% High drive outputs (­32mA IOH, 64mA IOL) Power off disable outputs permit "live insertion" Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V, TA = 25°C · Available in SSOP and TSSOP packages

DESCRIPTION:

The FCT16827T 20-bit buffer is built using advanced dual metal CMOS technology. These 20-bit bus drivers provide high-performance bus interface buffering for wide data/address paths or buses carrying parity. Two pair of NAND-ed output enable controls offer maximum control flexibility and are organized to operate the device as two 10-bit buffers or one 20-bit buffer. Flowthrough organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin. The FCT16827T is ideally suited for driving high capacitance loads and low impedance backplanes. The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane drivers.

FUNCTIONAL BLOCK DIAGRAM

1 1O E 1 56 1O E 2 2O E 2 2O E 1

28 29

55 1A 1

2 1Y 1 2A 1

42

15 2Y 1

T O NINE OTHER CHANNELS

T O NINE OTHER CHANNELS

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

INDUSTRIAL TEMPERATURE RANGE
1
© 2002 Integrated Device Technology, Inc.

JUNE 2002
DSC-5439/1

IDT74FCT16827AT/CT FAST CMOS 20-BIT BUFFER

INDUSTRIAL TEMPERATURE RANGE

PIN CONFIGURATION
1O E1 1Y1 1Y2

ABSOLUTE MAXIMUM RATINGS(1)
Symbol Description Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Storage Temperature DC Output Current Max ­0.5 to +7 ­0.5 to VCC+0.5 ­65 to +150 ­60 to +120 Unit V V °C mA
56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29
1O E 2 1A 1 1A 2

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

VTERM(2) VTERM(3) TSTG IOUT

GND
1Y3 1Y4

GND
1A 3 1A 4

VCC
1Y5 1Y6 1Y7

VCC
1A 5 1A 6 1A 7

NOTES: 1 . Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2 . All device terminals except FCT162XXX Output and I/O terminals. 3 . Outputs and I/O terminals for FCT162XXX.

GND
1Y8 1Y9 1Y10 2Y1 2Y2 2Y3

GND
1A 8 1A 9 1A 10 2A 1 2A2 2A 3

CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol CI N CO U T Parameter(1) Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 3.5 3.5 Max. 6 8 Unit pF pF

NOTE: 1 . This parameter is measured at characterization but not tested.

GND
2Y4 2Y5 2Y6

GND
2A 4 2A 5 2A 6

PIN DESCRIPTION
Pin Names xOEx xAx xYx Data Inputs 3-State Outputs Description Output Enable Inputs (Active LOW)

VCC
2Y7 2Y8

VCC
2A 7 2A 8

GND
2Y9 2Y10 2O E 1

GND
2A 9 2A10 2O E 2

FUNCTION TABLE(1)
Inputs xOE1 L L H X
NOTE: 1 . H = HIGH voltage level L = LOW voltage level X = Don't care Z = High-Impedance

SSOP/ TSSOP TOP VIEW

Outputs xAx L H X X xYx L H Z Z

xOE2 L L X H

2

IDT74FCT16827AT/CT FAST CMOS 20-BIT BUFFER

INDUSTRIAL TEMPERATURE RANGE

DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: Industrial: TA = ­40°C to +85°C, VCC = 5.0V ±10%
Symbol VIH VIL IIH IIL IOZH IOZL VIK IOS VH ICCL ICCH ICCZ Parameter Input HIGH Level Input LOW Level Input HIGH Current (Input pins)(5) Input HIGH Current (I/O pins)(5) Input LOW Current (Input pins)(5) Input LOW Current (I/O pins)(5) High Impedance Output Current (3-State Output pins)(5) Clamp Diode Voltage Short Circuit Current Input Hysteresis Quiescent Power Supply Current VCC = Max VIN = GND or VCC VCC = Min., IIN = ­18mA VCC = Max., VO = GND(3) -- VCC = Max. VO = 2.7V VO = 0.5V VI = GND Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VI = VCC Min. 2 -- -- -- -- -- -- -- -- ­80 -- -- Typ.(2) -- -- -- -- -- -- -- -- ­0.7 ­140 100 5 Max. -- 0.8 ±1 ±1 ±1 ±1 ±1 ±1 ­1.2 ­250 -- 500 V mA mV µA µA Unit V V µA

OUTPUT DRIVE CHARACTERISTICS
Symbol IO VOH Parameter Output Drive Current Output HIGH Voltage VCC = Max., VO = VCC = Min. VIN = VIH or VIL VOL IOFF Output LOW Voltage Input/Output Power Off Leakage(5) VCC = Min. VIN = VIH or VIL VCC = 0V, VIN or VO 4.5V -- -- ±1 µA
NOTES: 1 . For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type. 2 . Typical values are at VCC = 5.0V, +25°C ambient. 3 . Not more than one output should be shorted at one time. Duration of the test should not exceed one second. 4 . Duration of the condition can not exceed one second. 5 . This test limit for this parameter is ±5µA at TA = ­55°C.

Test Conditions(1) 2.5V(3) IOH = ­3mA IOH = ­15mA IOH = ­32mA(4) IOL = 64mA

Min. ­50 2.5 2.4 2 --

Typ.(2) -- 3.5 3.5 3 0.2

Max. ­180 -- -- -- 0.55

Unit mA V V

3

IDT74FCT16827AT/CT FAST CMOS 20-BIT BUFFER

INDUSTRIAL TEMPERATURE RANGE

POWER SUPPLY CHARACTERISTICS
Symbol ICC ICCD Parameter Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current(4) Test Conditions(1) VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open xOE1 = xOE2 = GND One Input Toggling 50% Duty Cycle VCC = Max. Outputs Open fi = 10MHz 50% Duty Cycle xOE1 = xOE2 = GND One Bit Toggling VCC = Max. Outputs Open fi = 2.5MHz 50% Duty Cycle xOE1 = xOE2 = GND Twenty Bits Toggling VIN = VCC VIN = GND Min. -- -- Typ.(2) 0.5 60 Max. 1.5 100 Unit mA µA/ MHz

IC

Total Power Supply Current(6)

VIN = VCC VIN = GND VIN = 3.4V VIN = GND VIN = VCC VIN = GND VIN = 3.4V VIN = GND

--

0.6

1.5

mA

--

0.9

2.3

--

3

5.5(5) 20.5(5)

--

8

NOTES: 1 . For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type. 2 . Typical values are at VCC = 5.0V, +25°C ambient. 3 . Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND. 4 . This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5 . Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6 . IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fCPNCP/2 + fiNi) ICC = Quiescent Current (ICCL, ICCH and ICCZ) ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices) NCP = Number of Clock Inputs at fCP fi = Input Frequency Ni = Number of Inputs at fi

4

IDT74FCT16827AT/CT FAST CMOS 20-BIT BUFFER

INDUSTRIAL TEMPERATURE RANGE

SWITCHING CHARACTERISTICS OVER OPERATING RANGE
74FCT16827AT Symbol tPLH tPHL Parameter Propagation Delay xAx to xYx Condition(1) CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 tPZH tPZL Output Disable Time xOEx to xYx CL = 5pF(3) RL = 500 CL = 50pF RL = 500 Min.(2) 1.5 1.5 1.5 1.5 1.5 1.5 -- Max. 8 15 12 23 9 10 0.5 Min.(2) 1.5 1.5 1.5 1.5 1.5 1.5 -- 74FCT16827CT Max. 3.7 7 4.8 9 4 4 0.5 ns ns ns Unit ns

tPZH tPZL

Output Enable Time xOEx to xYx

tSK(o)

Output Skew(4)

NOTES: 1 . See test circuit and waveforms. 2 . Minimum limits are guaranteed but not tested on Propagation Delays. 3 . This limit is guaranteed but not tested. 4 . Skew between any two outputs, of the same package, switching in the same direction. This parameter is guaranteed by design.

5




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