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Part: IDT5962-3829408MZA
Category:
Memory
-> SRAM
-> 64 Kb
Description: 8K X 8 Static RAM
Company: Integrated Device Technology, Inc.
Datasheet: Download IDT5962-3829408MZA datasheet File size : 239 kB
Request For quote: Find where to buy IDT5962-3829408MZA
Datasheet text preview:
CMOS Static RAM 64K (8K x 8-Bit)
Features
High-speed address/chip select access time Military: 20/25/35/45/55/70/85/100ns (max.) Industrial: 25/35ns (max.) Commercial: 15/20/25/35ns (max.) Low power consumption Battery backup operation 2V data retention voltage (L Version only) Produced with advanced CMOS high-performance technology Inputs and outputs directly TTL-compatible Three-state outputs Available in 28-pin DIP, CERDIP and SOJ Military product compliant to MIL-STD-883, Class B
IDT7164S IDT7164L
x
Description
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the circuit will automatically go to, and remain in, a lowpower stand by mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28pin 600 mil CERDIP. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
x x
x
x x x x
Functional Block Diagram
A0 VCC ADDRESS DECODER 65,536 BIT MEMORY ARRAY GND
A2 1
0
7
I/O 0 I/O CONTROL
I/O7
CS1 CS2 OE WE
CONTROL LOGIC
2967 drw 01
DECEMBER 2001
1
©2000 Integrated Device Technology, Inc. DSC-2967/11
IDT7164S/L CMOS Static RAM 64K (8K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Pin Configurations
NC A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15
Absolute Maximum Ratings(1)
VCC WE CS2 A8 A9 A11 OE A10 CS1 I/O 7 I/O 6 I/O 5 I/O 4 I/O 3
,
Symbol VTE RM
(2 )
Rating Te rminal Voltage with Respect to GND Op e rating Te mp e rature Te mp e rature Und e r Bias Sto rag e Temperature Po we r Dissipation DC Output Current
Com'l. -0.5 to +7.0
Mil. -0.5 to +7.0
Unit V
D28-1 D28-3 P28-1 P28-2 SO28-5
TA TB IA S TS TG PT IOUT
0 to +70 -55 to +125 -55 to +125 1.0 50
-55 to +125 -65 to +135 -65 to +150 1.0 50
o
C C C
o
o
W mA
2967 tbl 02
DIP/SOJ Top View
2967 drw 02
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC + 0.5V.
Pin Descriptions
Name A0 - A12 I/O0 - I/O7 CS1 CS2 WE OE GND V CC Description Ad d re s s Data Input/Output Chip Select Chip Select Write Enable Outp ut Enable Gro und Po we r
2967 tbl 01
Tr uth Table(1,2,3)
WE X X X X H H L CS1 H X VHC X L L L CS2 X L VHC or VLC VLC H H H OE X X X X H L X I/O High-Z High-Z High-Z High-Z High-Z DATA OUT DATAIN Function De se le c te d - Standby (ISB) De se le c te d - Standby (ISB) De se le c te d - Standby (ISB1) De se le c te d - Standby (ISB1) Outp ut Disabled Re ad Data Write Data
2967 tbl 03
NOTES: 1. CS2 will power-down CS1, but CS1 will not power-down CS2. 2. H = VIH, L = VIL, X = don't care. 3. VLC = 0.2V, VHC = VCC - 0.2V
Recommended DC Operating Conditions
Symbol V CC GND V IH VI L Parameter Sup p ly Voltage Gro und Inp ut HIGH Voltage Inp ut LOW Voltage Min. 4.5 0 2.2 -0.5(1) Typ. 5.0 0
____
Max. 5.5 0 VCC + 0.5 0.8
Unit V V
Recommended Operating Temperature and Supply Voltage
Grade Military Temperature -55 C to +125 C -40 C to +85 C 0OC to +70OC
O O O O
GND 0V 0V 0V
Vcc 5V ± 10% 5V ± 10% 5V ± 10%
2967 tbl 04
V Ind ustrial V
2967 tbl 05
____
Co mme rc ial
NOTE: 1. VIL (min.) = 1.5V for pulse width less than 10ns, once per cycle.
2
IDT7164S/L CMOS Static RAM 64K (8K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Ca pacitance (TA = +25°C, f = 1.0MHz)
Symbol CIN CI/O Parameter(1) Inp ut Capacitance I/O Capacitance Conditions VIN = 0V VOUT = 0V Max. 8 8 Unit pF pF
2967 tbl 06
NOTE: 1. This parameter is determined by device characterization, but is not production tested.
DC Electrical Characteristics(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
7164S15 7164L15 7164S20 7164L20 Com'l. 100 90 170 150 20 3 15 0.2 Mi l . 110 100 180 160 20 5 20 1 Com'l. 90 80 170 150 20 3 15 0.2 7164S25 7164L25 Ind. 90 80 170 150 20 3 15 0.2 Mi l . 110 100 180 160 20 5 20 1
2967 tbl 07
Symbol ICC1
Parameter Op e rating Power Supply Current CS1 = VIL, CS2 = VIH, Outputs Open V CC = Max., f = 0(2) Dy namic Operating Current CS1 = VIL, CS2 = VIH, Outputs Open V CC = Max., f = fMAX(2) Stand b y Power Supply Current (TTL Level), CS1 > VIH, CS2 VHC and CS2 > VHC, or 2. CS2 < VLC
Power S L S L S L S L
Com'l. 110 100 180 150 20 3 15 0.2
Unit mA
ICC2
mA
ISB
mA
IS B1
mA
7164S35 7164L35 Symbol ICC1 Parameter Op e rating Power Supply Current CS1 = VIL, CS2 = VIH, Outputs Open VCC = Max., f = 0(2) Dy namic Operating Current CS1 = VIL, CS2 = VIH, Outputs Open VCC = Max., f = fMAX(2) Stand b y Power Supply Current (TTL Level), CS1 > VIH, CS2 VHC and CS2 > VHC, or 2. CS2 < VLC Power Com'l. S L S L S L S L 90 80 150 130 20 3 15 0.2 Ind. 90 80 150 130 20 3 15 0.2 Mi l . 100 90 160 140 20 5 20 1
7164S45 7164L45 Mi l . 100 90 160 130 20 5 20 1
7164S55 7164L55 Mi l . 100 90 160 125 20 5 20 1
7164S70 7164L70 Mi l . 100 90 160 120 20 5 20 1
7164S85/100 7164L85/100 Mi l . 100 90 160 120 20 5 20 1
2967 tbl 08
Unit mA
ICC2
mA
ISB
mA
IS B1
mA
NOTES: 1. All values are maximum guaranteed values. 2 . fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.
6.42 3
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