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Part: IDT5962-8601501YA
Category:
Memory
-> SRAM
-> 64 Kb
Description: 64K X 1 Static RAM
Company: Integrated Device Technology, Inc.
Datasheet: Download IDT5962-8601501YA datasheet File size : 239 kB
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Datasheet text preview:
CMOS Static RAM 64K (64K x 1-Bit)
Description
IDT7187S IDT7187L
x
Features
High speed (equal access and cycle time) Military: 25/35/45/55/70/85ns (max.) Low power consumption Battery backup operation--2V data retention (L version only) JEDEC standard high-density 22-pin ceramic DIP packaging Produced with advanced CMOS high-performance technology Separate data input and output Input and output directly TTL-compatible Military product compliant to MIL-STD-883, Class B
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The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available. Both the standard (S) and low-power (L) versions of the IDT7187 provide two standby modes--ISB and ISB1. ISB provides low-power operation; ISB1 provides ultra-low-power operation. The low-power (L) version also provides the capability for data retention using battery backup. When using a 2V battery, the circuit typically consumes only 30µW. Ease of system design is achieved by the IDT7187 with full asynchronous operation, along with matching access and cycle times. The device is packaged in an industry standard 22-pin, 300 mil ceramic DIP. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
Functional Block Diagram
A A VCC A A A A A CS D ATAIN COLUMN I/O DATA OUT ROW SELECT 65,536-BIT MEMORY ARRAY GND
WE A A A A A A A
2986 drw 01
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc. DSC-2986/09
IDT7187S/L CMOS Static RAM 64K (64K x 1-Bit)
Military Temperature Range
Pin Configuration
A0 A1 A2 A3 A4 A5 A6 A7 DATAOUT WE GND
1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12
Absolute Maximum Ratings (1)
Symbol Rating Te rminal Voltage with Respect to GND Op e rating Temperature Te mpe rature Under Bias Sto rag e Temperature Po we r Dissipation DC Output Current Value -0.5 to +7.0 -55 to +125 -65 to +135 -65 to +150 1.0 50 Unit V
o o o
VCC A15 A14 A13 A12 A11 A10 A9 A8 DATAIN CS
2986 drw 02
VTE RM TA TB IA S TS TG PT IOUT
,
C C C
D22-1
W mA
2986 tbl 03
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DIP Top View
Capacitance (TA = +25°C, f = 1.0MHz)
Symbol CIN COUT Parameter(1) Inp ut Capacitance Outp ut Capacitance Conditions VIN = 0V VOUT = 0V Max. 8 8 Unit pF pF
2986 tbl 04
Pin Descriptions
Name A0 - A15 CS WE V CC DATA IN DATAOUT GND Description Ad d re ss Inputs Chip Select Write Enable Po we r Data Input Data Output Gro und
2986 tbl 01
NOTE: 1. This parameter is determined by device characterization, but is not production tested.
Recommended DC Operations Conditions
Symbol V CC GND VIH VI L Parameter Sup ply Voltage Gro und Inp ut High Voltage Inp ut Low Voltage Min. 4.5 0 2.2 -0.5
(1 )
Typ. 5.0 0
____
Max. 5.5 0 6.0 0.8
Unit V V V V
2986 tbl 05
____
Tr uth Table(1)
Mode Stand b y Re ad Write CS H L L WE X H L Output Hig h-Z DOUT Hig h-Z Power Stand b y Ac tiv e Ac tiv e
2986 tbl 02
NOTE: 1. VIL (min.) = 3.0V for pulse width less than 20ns, once per cycle.
Recommended Operating Temperature and Supply Voltage
Grade Military Temperature -55OC to +125OC GND 0V Vcc 5V ± 10%
2986 tbl 06
NOTE: 1. H = VIH, L = VIL, X = don't care.
2
IDT7187S/L CMOS Static RAM 64K (64K x 1-Bit)
Military Temperature Range
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
IDT7187S Symbol |ILI| |ILO| VO L Parameter Inp ut Leakage Current Outp ut Leakage Current Outp ut Low Voltage Test Conditions V CC = Max., VIN = GND to VCC V CC = Max., CS = VIH, VOUT = GND to VCC IOL = 10mA, VCC = Min. IOL = 8mA, VCC = Min. VOH Outp ut High Voltage IOH = -4mA, VCC = Min. Min.
____
IDT7187L Min.
____
Max. 10 10 0.5 0.4
____
Max. 5 5 0.5 0.4
____
Unit µA µA V
____
____
____
____
____
____
2.4
2.4
V
2986 tbl 07
DC Electrical Characteristics(1)
Symbol ICC1 Parameter Op e rating Power Sup p ly Current CS = VIL, Outputs Open VCC = Max., f = 0(2) Dy namic Operating Current CS = VIL, Outputs Open VCC = Max., f = fMAX(2) Stand b y Power Supply Curre nt (TTL Level) CS > VIH, Outputs Open VCC = Max., f = fMAX(2) Full Standby Power Sup p ly Current (CMOS Level) CS > VHC, VCC = Max., VIN VHC, f = 0(2) Power S L S L S L S L
(VCC = 5V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
7187S25 7187L25 105 85 130 110 55 50 20 1.5 7187S35 7187L35 105 85 120 100 50 40 20 1.5 7187S45 7187L45 105 85 120 95 50 35 20 1.5 7187S55 7187L55 105 85 120 90 50 30 20 1.5 7187S70 7187L70 105 85 120 90 50 28 20 1.5 7187S85 7187L85 105 85 120 90 50 28 20 1.5
2986 tbl 08
Unit mA
ICC2
mA
ISB
mA
IS B1
mA
NOTES: 1. All values are maximum guaranteed values. 2. At f = fMAX address and data inputs are cycling at the maximum frequency of read cycles of 1/tRC. f = 0 means no input lines change.
6.42 3
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