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Part: IDT5962-8685923YA
Category:
Memory
-> SRAM
-> 128 Kb
Description: 16K X 4 Static RAM
Company: Integrated Device Technology, Inc.
Datasheet: Download IDT5962-8685923YA datasheet File size : 239 kB
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Datasheet text preview:
CMOS Static RAM 64K (16K x 4-Bit)
IDT7188S IDT7188L
x
Features
High-speed (equal access and cycle times) Military: 25/35/45/55/70/85ns (max.) Low power consumption Battery backup operation -- 2V data retention (L version only) Available in high-density industry standard 22-pin, 300 mil ceramic DIP Produced with advanced CMOS technology Inputs/outputs TTL-compatible Military product compliant to MIL-STD-883, Class B innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a reduced power standby mode, ISB1, which is activated when CS goes HIGH. This capability significantly decreases power while enhancing system reliability. The low-power version (L) version also offers a battery backup data retention capability where the circuit typically consumes only 30µW operating from a 2V battery. All inputs and outputs are TTL-compatible and operate from a single 5V supply. The IDT7188 is packaged in a 22-pin, 300 mil ceramic DIP providing excellent board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
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Description
The IDT7188 is a 65,536-bit high-speed static RAM organized as 16K x 4. It is fabricated using IDT's high-performance, high-reliability technology -- CMOS. This state-of-the-art technology, combined with
Functional Block Diagram
A0 VCC GND 65,536-BIT MEMORY ARRAY
DECODER
A13
I/O0 I/O1 I/O2 I/O3
COLUMN I/O INPUT DATA CONTROL
,
CS WE
2989 drw 01
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc. DSC-2989/09
IDT7188S/L CMOS Static RAM 64K (16K x 4-Bit)
Military Temperature Range
Pin Configuration
A0 A1 A2 A3 A4 A5 A6 A7 A8 CS GND
1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12
Absolute Maximum Ratings(1)
Symbol Rating Te rminal Voltage with Respect to GND Op e rating Temperature Te mp e rature Under Bias Sto rag e Temperature Po we r Dissipation DC Output Current Value -0.5 to +7.0 -55 to +125 -65 to +135 -65 to +150 1.0 50 Unit V
o o
D22-1
V CC A 13 A 12 A 11 A 10 A9 I/O 3 I/O 2 I/O 1 I/O 0 WE
2989 drw 02
VTE RM TA TB IA S TS TG PT IOUT
C C C
o
W mA
2989 tbl 03
,
DIP Top View
NOTE: 1 . Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
(TA = +25°C, f = 1.0MHz, VCC = 0V)
Symbol Parameter(1) Inp ut Capacitance I/O Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 6 Unit pF pF
2989 tbl 04
Capacitance
Pin Descriptions
Name A0 - A13 CS WE I/O0 - I/O3 V CC GND Description Ad d re ss Inputs Chip Select Write Enable Data Input/Output Po we r Gro und
2989 tbl 01
CIN CI/O
NOTE: 1 . This parameter is determined by device characterization, but is not production tested.
Recommended DC Operating Conditions
Symbol V CC GND Parameter Sup p ly Voltage Gro und Inp ut High Voltage Input Low Voltage Min. 4.5 0 2.2 -0.5(1) Typ. 5.0 0
____
Max. 5.5 0 6.0 0.8
Unit V V V V
2989 tbl 05
Tr uth Table
Mode Stand b y Re ad Write
(1)
V IH WE X H L I/O Hig h-Z DOUT DIN Power Stand b y Ac tiv e Ac tiv e
2989 tbl 02
CS H L L
VI L
____
NOTE: 1 . VIL (min.) = 3.0V for pulse width less than 20ns,once per cycle.
NOTE: 1 . H = VIH, L = VIL, X = don't care.
Recommended Operating Temperature and Supply Voltage
Grade Military Temperature -55 C to +125 C
O O
GND 0V
Vcc 5V ± 10%
2989 tbl 06
2
IDT7188S/L CMOS Static RAM 64K (16K x 4-Bit)
Military Temperature Range
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
IDT7188S Symbol |ILI| |ILO| VO L Parameter Inp ut Leakage Current Outp ut Leakage Current Outp ut Low Voltage Test Conditions VCC = Max., VIN = GND to VCC VCC = Max., CS = VIH, VOUT = GND to VCC IOL = 10mA, VCC = Min. IOL = 8mA, VCC = Min. VOH Outp ut High Voltage IOH = -4mA, VCC = Min. Min.
____
IDT7188L Min.
____
Max. 10 10 0.5 0.4
____
Max. 5 5 0.5 0.4
____
Unit µA µA V
____
____
____
____
____
____
2.4
2.4
V
2989 tbl 07
DC Electrical Characteristics(1)
Symbol ICC1 Parameter Op e rating Power Sup p ly Current CS = VIL, Outputs Open V CC = Max., f = 0(2) Dy namic Operating Current CS = VIL, Outputs Open V CC = Max., f = fMAX(2) Stand b y Power Supply Curre nt (TTL Level) CS > VIH, Outputs Open V CC = Max., f = fMAX(2) Full Standby Power Sup p ly Current (CMOS Level) CS > VHC, VCC = Max., VIN > VHC o r VIN < VLC, f = 0(2) Power S L S L S L S L
(VCC = 5V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
7188S25 7188L25 105 80 155 120 60 40 20 1.5 7188S35 7188L35 105 80 140 115 50 40 20 1.5 7188S45 7188L45 105 80 140 110 50 35 20 1.5 7188S55 7188L55 105 80 140 110 50 35 20 1.5 7188S70 7188L70 105 80 140 110 50 35 20 1.5 7188S85 7188L85 105 80 140 105 50 35 20 1.5
2989 tbl 08
Unit mA
ICC2
mA
ISB
mA
IS B1
mA
NOTES: 1 . All values are maximum guaranteed values. 2 . At f = fMAX address and data inputs are cycling at the maximum frequency of read cycles of 1/tRC. f = 0 means no input lines change.
6.42 3
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