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Part: IDT5962-8855206UA
Category: Memory -> SRAM -> 256 Kb
Description: 32K X 8 Static RAM
Company: Integrated Device Technology, Inc.
Datasheet: Download IDT5962-8855206UA datasheet File size : 239 kB
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Datasheet text preview:
CMOS Static RAM 256K (32K x 8-Bit)
IDT71256SA
x x
Features
32K x 8 advanced high-speed CMOS static RAM Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options Equal access and cycle times Commercial and Industrial: 12/15/20/25ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly TTL-compatible Low power consumption via chip deselect Commercial product available in 28-pin 300- and 600-mil Plastic DIP, 300 mil Plastic SOJ and TSOP packages Industrial product available in 28-pin 300 mil Plastic SOJ and TSOP packages
Description
The IDT71256SA is a 262,144-bit high-speed Static RAM organized as 32K x 8. It is fabricated using IDT's high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs. The IDT71256SA has an output enable pin which operates as fast as 6ns, with address access times as fast as 12ns. All bidirectional inputs and outputs of the IDT71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71256SA is packaged in 28-pin 300- and 600-mil Plastic DIP, 28-pin 300 mil Plastic SOJ and TSOP.
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Functional Block Diagram
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14
ADDRESS DECODER
262,144-BIT MEMORY ARRAY
,
I/O0 - I/O7
8
8
I/O CONTROL
2948 drw 01
CS WE OE
CONTROL LOGIC
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc. DSC-2948/07
IDT71256SA CMOS Static RAM 256K (32K x 8-Bit)
Commercial and Industrial Temperature Ranges
Pin Configurations
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15
Absolute Maximum Ratings(1)
Symbol Rating Sup p ly Voltage Re lativ e to GND Te rminal Voltage Re lativ e to GND Tempe rature Under Bias Storage Temperature Po we r Dissipation DC Output Current Value -0.5 to +7.0 -0.5 to VCC+0.5 -55 to +125 -55 to +125 1.0 50 Unit V V
o
SO28-5 P28-2 P28-1
VCC WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3
2948 drw 02
VCC VTE RM TBIA S TSTG PT IOUT
C C
o
W mA
2948 tbl 02
,
DIP/SOJ Top View
OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3
22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8
NOTE: 1 . Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
SO28-8
A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2
Truth Table(1,2)
CS L OE L X H X X WE H L H X X I/O DATAOUT DATAIN Hig h-Z Hig h-Z Hig h-Z Function Re ad Data Write Data Outp uts Disabled De se le cte d - Standby (ISB) De se le cte d - Standby (ISB1)
2948 tbl 03
,
L L H VHC(3)
2948 drw 02a
TSOP Top View
NOTES: 1 . H = VIH, L = VIL, x = Don't care. 2 . VLC = 0.2V, VHC = VCC 0.2V. 3. Other inputs VHC or VLC.
Recommended Operating Temperature and Supply Voltage
Grade Co mme rcial Ind ustrial Temperature 0OC to +70OC -40OC to +85OC GND 0V 0V Vcc 4.5V ± 5.5V 4.5V ± 5.5V
2948 tbl 01
Recommended DC Operating Conditions
Symbol VCC GND VIH VIL Parameter Sup p ly Voltage Ground Inp ut High Voltage Input Low Voltage Min. 4.5 0 2.2 -0.5(1) Typ. 5.0 0
____
Max. 5.5 0 VCC +0.5 0.8
Unit V V V V
2948 tbl 04
____
NOTE: 1 . VIL (min.) = 1.5V for pulse width less than 10ns, once per cycle.
2
IDT71256SA CMOS Static RAM 256K (32K x 8-Bit)
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Symbol |ILI| |ILO| VO L VOH IDT71256SA Parameter Inp ut Leakage Current Outp ut Leakage Current Outp ut Low Voltage Outp ut High Voltage Test Conditions VCC = Max., VIN = GND to VCC VCC = Max., CS = VIH, VOUT = GND to VCC IOL = 8mA, VCC = Min. IOH = -4mA, VCC = Min. Min.
___ ___ ___
Max. 5 5 0.4
___
Unit µA µA V V
2948 tbl 05
2.4
DC Electrical Characteristics(1)
Symbol ICC ISB IS B1 Parameter Dy namic Operating Current CS VIH, Outputs Open, VCC = Max., f = fMAX(2) Stand by Power Supply Current (CMOS Level) CS > VHC, Outputs Open, VCC = Max., f = 0(2), VIN VHC
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC0.2V)
71256SA12 160 50 15 71256SA15 150 40 15 71256SA20 145 40 15 71256SA25 145 40 15 Unit mA mA mA
NOTES: 1 . All values are maximum guaranteed values. 2 . fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.
2948 tbl 06
AC Test Conditions
Inp ut Pulse Levels Inp ut Rise/Fall Times Inp ut Timing Reference Levels Outp ut Reference Levels AC Test Load GND to 3.0V 3ns 1.5V 1.5V Se e Figures 1 and 2
2948 tbl 07
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol CIN CI/O Parameter(1) Inp ut Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 7 7 Unit pF pF
2948 tbl 08
Capacitance
NOTE: 1 . This parameter is guaranteed by device characterization, but not production tested.
5V 480 DATA OUT 30pF* 255
2948 drw 03
5V 480 DATA OUT 5pF* 255
,
6.42 3
.
2948 drw 04
Figure 1. AC Test Load *Including jig and scope capacitance.
Figure 2. AC Test Load (for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)
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