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Part: IDT6167LA25P
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 5V 2K X 8 CMOS Asynchronous Static RAM
Company: Integrated Device Technology, Inc.
Datasheet: Download IDT6167LA25P datasheet File size : 239 kB
Request For quote: Find where to buy IDT6167LA25P
Datasheet text preview:
CMOS Static RAM 16K (2K x 8-Bit)
IDT6116SA IDT6116LA
x
Features
High-speed access and chip select times Military: 20/25/35/45/55/70/90/120/150ns (max.) Industrial: 20/25/35/45ns (max.) Commercial: 15/20/25/35/45ns (max.) Low-power consumption Battery backup operation 2V data retention voltage (LA version only) Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Input and output directly TTL-compatible Static operation: no clocks or refresh required Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip, 24-pin SOIC and 24-pin SOJ Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby power mode, as long as CS remains HIGH. This capability provides significant system level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing high board-level packing densities. Military grade product is manufactured in compliance to the latest version of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
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Functional Block Diagram
A0 V CC ADDRESS DECODER A 10 128 X 128 MEMORY ARRAY GND
I/O 0 INPUT DATA CIRCUIT I/O 7
I/O CONTROL
,
CS OE WE CONTROL CIRCUIT
3089 drw 01
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc. DSC-3089/03
IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and In dustrial Temperature Ranges
Pin Configurations
A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 WE OE A10 CS I/O 7 I/O 6 I/O 5 I/O 4 I/O3
3089 drw 02
Capacitance (TA = +25°C, f = 1.0 MHZ)
Symbol CIN CI/O Parameter(1) Inp ut Capacitance I/O Capacitance Conditions VIN = 0V VOUT = 0V Max. 8 8 Unit pF pF
3089 tbl 03
P24-2 P24-1 D24-2 D24-1 SO24-2 SO24-4
NOTE: 1 . This parameter is determined by device characterization, but is not production tested.
,
Absolute Maximum Ratings(1)
Symbol VTE RM
(2 )
DIP/SOIC/SOJ Top View Pin Description
Name A0 - A10 I/O0 - I/O7 CS WE OE V CC GND Description Ad d re s s Inputs Data Input/Output Chip Select Write Enable Outp ut Enable Po we r Gro und
3089 tbl 01
Rating Te rminal Voltage with Respect to GND Op e rating Te mp e rature Te mp e rature Und e r Bias Sto rag e Temperature Po we r Dissipation DC Output Current
Com'l. -0.5 to +7.0
Mi l . -0.5 to +7.0
Unit V
TA TB IA S TS TG PT IOUT
0 to +70 -55 to +125 -55 to +125 1.0 50
-55 to +125 -65 to +135 -65 to +150 1.0 50
o
C C C
o
o
W mA
3089 tbl 04
NOTES: 1 . Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2 . VTERM must not exceed VCC +0.5V.
Tr uth Table(1)
Mode Stand b y Re ad Re ad Write CS H L L L OE X L H X WE X H H L I/O Hig h-Z DATA OUT Hig h-Z DATA IN
3089 tbl 02
NOTE: 1 . H = VIH, L = VIL, X = Don't Care.
2
IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and In dustrial Temperature Ranges
Recommended Operating Temperature and Supply Voltage
Grade Military Ind ustrial Co mme rc ial Ambient Temperature -55OC to +125OC -45OC to +85OC 0OC to +70OC GND 0V 0V 0V Vcc 5.0V ± 10% 5.0V ± 10% 5.0V ± 10%
3089 tbl 05
Recommended DC Operating Conditions
Symbol V CC GND VIH VI L Parameter Sup ply Voltage Gro und Inp ut High Voltage Inp ut Low Voltage Min. 4.5 0 2.2 -0.5
(1 )
Typ. 5.0 0 3.5
____
Max. 5.5 0 VCC +0.5 0.8
(2 )
Unit V V V V
3089 tbl 06
NOTES: 1 . VIL (min.) = 3.0V for pulse width less than 20ns, once per cycle. 2 . VIN must not exceed VCC +0.5V.
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Symbol |ILI| |ILO| VO L VOH IDT6116SA Parameter Inp ut Leakage Current Outp ut Leakage Current Outp ut Low Voltage Outp ut High Voltage Test Conditions VCC = Max., VIN = GND to VCC VCC = Max., CS = VIH, VOUT = GND to VCC IOL = 8mA, VCC = Min. IOH = -4mA, VCC = Min. MIL. COM' L. MIL. COM' L. Min.
____ ____ ____ ____
IDT6116LA Min.
____ ____ ____ ____
Max. 10 5 10 5 0.4
____
Max. 5 2 5 2 0.4
____
Unit µA µA V V
3089 tbl 07
____
____
2.4
2.4
DC Electrical Characteristics(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6116SA15 Symbol ICC1 Parameter Op e rating Power Supply Current CS VIH, Outputs Open VCC = Max., f = fMAX(2) Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., VIN VHC, f = 0 Power SA LA SA LA SA LA SA LA Com'l Only 105 95 150 140 40 35 2 0.1 6116SA20 6116LA20 Com'l & Ind 105 95 130 120 40 35 2 0.1 Mil 130 120 150 140 50 45 10 0.9 6116SA25 6116LA25 Com'l & Ind 80 75 120 110 40 35 2 0.1 Mil 90 85 135 125 45 40 10 0.9 6116SA35 6116LA35 Com'l. & Ind. 80 75 100 95 25 25 2 0.1 Mil 90 85 115 105 35 30 10 0.9
3089 tbl 08
Unit mA
ICC2
mA
ISB
mA
IS B1
mA
NOTES: 1 . All values are maximum guaranteed values. 2 . fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.
6.42 3
IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and In dustrial Temperature Ranges
DC Electrical Characteristics(1) (continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6116SA45 6116LA45 Symbol ICC1 Parameter Op e rating Power Supply Curre nt, CS VIH, Outputs Open VCC = Max., f = fMAX(2) Full Standby Power Sup p ly Current (CMOS Le ve l), CS > VHC, VCC = Max., VIN VHC, f = 0 Power SA LA SA LA SA LA SA LA Com'l & Ind 80 75 100 90 25 20 2 0.1 Mil 90 85 100 95 25 20 10 0.9 6116SA55 6116LA55 Mil Only 90 85 100 90 25 20 10 0.9 6116SA70 6116LA70 Mil Only 90 85 100 90 25 20 10 0.9 6116SA90 6116LA90 Mil Only 90 85 100 85 25 25 10 0.9 6116SA120 6116LA120 Mil Only 90 85 100 85 25 15 10 0.9 6116SA150 6116LA150 Mil Only 90 85 90 85 25 15 10 0.9
3089 tbl 09
Unit mA
ICC2
mA
ISB
mA
IS B1
mA
NOTES: 1 . All values are maximum guaranteed values. 2 . fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC 0.2V)
Typ. (1) VCC @ Symbol V DR ICCDR tCDR(3) tR(3) Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Re tentio n Time Op e ratio n Recovery Time Inp ut Leakage Current Test Condition
____
Max. VCC @ 3.0V
____
Min. 2.0
2.0V
____
2.0V
____
3.0V
____
Unit V µA ns
MIL. COM' L. CS > VHC VIN > VHC or < VLC
____ ____
0.5 0.5 0
1.5 1.5
____
200 20
____
300 30
____
____
tRC(2)
____
____
____
____
____
ns µA
3089 tbl 10
IILII
____
____
2
2
NOTES: 1 . TA = + 25°C 2 . tRC = Read Cycle Time. 3 . This parameter is guaranteed by device characterization, but is not production tested.
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IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and In dustrial Temperature Ranges
Low VCC Data Retention Waveform
DATA RETENTION MODE VCC tCDR CS VDR VIH VIH
3089 drw 03
4.5V
VDR 2V
4.5V tR
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AC Test Conditions
Inp ut Pulse Levels Inp ut Rise/Fall Times Inp ut Timing Reference Levels Output Reference Levels AC Test Load GND to 3.0V 5ns 1.5V 1.5V Se e Figures 1 and 2
3089 tbl 11
5V
5V
480 DATAOUT 255 30pF* DATAOUT 255
480
5pF*
,
3089 drw 04 3089 drw 05
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Figure 1. AC Test Load *Including scope and jig.
Figure 2. AC Test Load (for tOLZ, tCLZ, tOHZ, tWHZ, tCHZ & tOW)
6.42 5
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