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Part: IDT74FCT16245
Category:
Logic
-> Bus Interface
-> Bus Oriented Circuits
Description: Fast CMOS 16-bit Bidirectional Transceiver
Company: Integrated Device Technology, Inc.
Datasheet: Download IDT74FCT16245 datasheet File size : 843 kB
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Datasheet text preview:
IDT54/74FCT16245T/AT/CT/ET FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
FEATURES:
- - - - - - - - - - 0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 25 mil pitch SSOP, 19.6 mil pitch TSSOP, 15.7 mil pitch TVSOP and 25 mil pitch CERPACK packages Extended commercial range of -40°C to +85°C High drive outputs (-32mA IOH, 64mA IOL) Power off disable outputs permit "live insertion" Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V, TA = 25° C
IDT54/74FCT16245T/AT/CT/ET
DESCRIPTION:
The FCT16245T 16-bit transceiver is built using advanced dual metal CMOS technology. These high-speed, low-power transceivers are ideal for synchronous communication between two busses (A and B). The Direction and Output Enable controls operate these devices as either two independent 8-bit transceivers or one 16-bit transceiver. The direction control pin (xDIR) controls the direction of data flow. The output enable pin (xOE) overrides the direction control and disables both ports. All inputs are designed with hysteresis for improved noise margin. The FCT16245T is ideally suited for driving high-capacitance loads and low-impedance backplanes. The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane drivers.
FUNCTIONAL BLOCK DIAGRAM
1
DIR
1OE 1A 1 1B 1 1A 2 1B 2 1A 3 1B 3 1A 4 1B 4 1A 5 1B 5 1A 6 1B 6 1A 7 1B 7 1A 8 1B 8
2
DIR
2O E 2A 1 2B 1 2A 2 2B 2 2A 3 2B 3 2A 4 2B 4 2A 5 2B 5 2A 6 2B 6 2A 7 2B 7 2A 8 2B 8
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
c 1999 Integrated Device Technology, Inc.
AUGUST 1999
DSC-5456/-
IDT54/74FCT16245T/AT/CT/ET FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
1 D IR 1B 1 1B 2
ABSOLUTE MAXIMUM RATINGS(1)
48 47 46 45 44 43 42 41 40 39 38
1OE 1A 1 1A 2
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Symbol VTERM(2) VTERM(3) TSTG IOUT
Description Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Storage Temperature DC Output Current
Max 0.5 to +7 0.5 to VCC+0.5 65 to +150 60 to +120
Unit V V °C mA
5v16-link
GND
1B 3 1B 4
GND
1A 3 1A 4
VCC
1B 5 1B 6
VCC
1A 5 1A 6
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Allll device terminals except FCT162XXXT OutputFCT166XXXT (APort) A device terminals except FCT162XXXT and and I/O terminals. terminals. 3. Outtputt and I/O terminals for FCT162XXXT. Ou pu and 3. Output and I/O terminals for FCT162XXXT and FCT166XXXT (A-Port).
GND
1B 7 1B 8 2B 1 2B 2
GND
1A 7 1A 8 2A 1 2A 2
CAPACITANCE (TA = +25OC, f = 1.0MHz)
Symbol CIN COUT Parameter(1) Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 3.5 3.5 Max. 6 8 Unit pF pF
5v16-link
S O 4 8 -1 3 7 S O 4 8 -2 S O 4 8 -3 3 6 E 4 8 -1 35 34 33 32 31 30 29 28 27 26 25
NOTE: 1. This parameter is measured at characterization but not tested.
GND
2B 3 2B 4
GND
2A 3 2A 4
PIN DESCRIPTION
Pin Names xOE xDIR xAx xBx Description Output Enable Input (Active LOW) Direction Control Input Side A Inputs or 3-State Outputs Side B Inputs or 3-State Outputs
VCC
2B 5 2B 6
VCC
2A 5 2A 6
GND
2B 7 2B 8 2 D IR
GND
2A 7 2A 8 2OE
FUNCTION TABLE(1)
Inputs xOE L L H xDIR L H X Outputs Bus B Data to Bus A Bus A Data to Bus B High Z State
SSOP/ TSSOP/ TVSOP/ CERPACK TOP VIEW
NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don't Care Z = High-Impedance
2
IDT54/74FCT16245T/AT/CT/ET FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: Commercial: TA = -40°C to +85°C, VCC = 5.0V ±10%; Military: TA = -55°C to +125°C, VCC = 5.0V ±10%
Symbol VIH VIL IIH IIL IOZH IOZL VIK IOS VH ICCL ICCH ICCZ Parameter Input HIGH Level Input LOW Level Input HIGH Current (Input pins)(5) Input HIGH Current (I/O pins)(5) Input LOW Current (Input pins)(5) Input LOW Current (I/O pins)(5) High Impedance Output Current (3-State Output pins)(5) Clamp Diode Voltage Short Circuit Current Input Hysteresis Quiescent Power Supply Current VCC = Max. VIN = GND or VCC VCC = Min., IIN = 18mA VCC = Max., VO = GND(3) -- VCC = Max. VO = 2.7V VO = 0.5V VI = GND Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VI = VCC Min. 2 -- -- -- -- -- -- -- -- 80 -- -- Typ.(2) -- -- -- -- -- -- -- -- 0.7 140 100 5 Max. -- 0.8 ±1 ±1 ±1 ±1 ±1 ±1 1.2 250 -- 500 V mA mV µA µA Unit V V µA
5v16-link
OUTPUT DRIVE CHARACTERISTICS
Symbol IO VOH Parameter Output Drive Current Output HIGH Voltage Test Conditions(1) VCC = Max., VO = 2.5V(3) VCC = Min. VIN = VIH or VIL IOH = 3mA IOH = 12mA MIL IOH = 15mA COM'L IOH = 24mA MIL IOH = 32mA COM'L(4) VOL IOFF Output LOW Voltage Input/Output Power Off Leakage(5) VCC = Min. VIN = VIH or VIL VCC = 0V, VIN or VO 4.5V IOL = 48mA MIL IOL = 64mA COM'L -- -- ±1 µA -- 0.2 0.55 V 2 3 -- V Min. 50 2.5 2.4 Typ.(2) -- 3.5 3.5 Max. 180 -- -- Unit mA V V
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient. 3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second. 4. Duration of the condition can not exceed one second. 5. The test limit for this parameter is ±5µA at TA = -55°C.
3
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