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Part: IDT74FCT810BTQB
Category:
Description: Fast CMOS Buffer/clock Driver
Company: Integrated Device Technology, Inc.
Datasheet: Download IDT74FCT810BTQB datasheet File size : 843 kB
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Datasheet text preview:
FAST CMOS BUFFER/CLOCK DRIVER
Integrated Device Technology, Inc.
IDT54/74FCT810BT/CT
FEATURES:
· · · · · · · · 0.5 MICRON CMOS technology Guaranteed low skew 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) · Available in DIP, SOIC, SSOP, QSOP, CERPACK and
LCC packages · Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT54/74FCT810BT/CT is a dual bank inverting/ noninverting clock driver built using advanced dual metal CMOS technology. It consists of two banks of drivers, one inverting and one non-inverting. Each bank drives five output buffers f r o m a standard TTL-compatible input. The IDT54/ 74FCT810BT/CT have low output skew, pulse skew and package skew. Inputs are designed with hysteresis circuitry for improved noise immunity. The outputs are designed with TTL output levels and controlled edge rates to reduce signal noise. The part has multiple grounds, minimizing the effects of ground inductance.
FUNCTIONAL BLOCK DIAGRAMS
PIN CONFIGURATIONS
VCC 1 2 3 4 5 6 7 8 9 10 P20-1 D20-1 SO20-2 SO20-7 SO20-8 & E20-1 20 19 18 17 16 15 14 13 12 11 VCC O B1 O B2 O B3 GND O B4 O B5 GND O EB INB
3103 drw 02
OEA 5 INA OA1-OA5
O A1 O A2 O A3 GND
OEB 5 INB OB1-OB5
3103 drw 01
OA4 O A5 GND OEA INA
DIP/SOIC/SSOP/QSOP/CERPACK TOP VIEW
O A2 O A1
INDEX
3 O A3 GND OA4 O A5 GND 4 5 6 7 8
2
1
20 19 18 17 OB2 O B3 GND O B4 O B5
L20-2
O B1
16 15 14
9 10 11 12 13
O EA
V CC INB
O EB
INA
VCC
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
LCC TOP VIEW
GND
3103 drw 03
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1995 Integrated Device Technology, Inc.
OCTOBER 1995
DSC-4646/3
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IDT54/74FCT810BT/CT FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN DESCRIPTION
Pin Names OEA, OEB INA, INB OAn, OBn Description 3-State Output Enable Inputs (Active LOW) Clock Inputs Clock Outputs
3103 tbl 01
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Rating VTERM(2) Terminal Voltage with Respect to GND VTERM(3) Terminal Voltage with Respect to GND TA Operating Temperature TBIAS Temperature Under Bias TSTG Storage Temperature I OUT DC Output Current Commercial 0.5 to +7.0 Military 0.5 to +7.0 Unit V
0.5 to VCC +0.5 0 to +70 55 to +125 55 to +125 60 to +120
0.5 to VCC +0.5 55 to +125 65 to +135 65 to +150 60 to +120
V °C °C °C mA
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter(1) CIN Input Capacitance COUT Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 4.5 5.5 Max. Unit 6.0 pF 8.0
pF
3103 lnk 02
NOTE: 1. This parameter is measured at characterization but not tested.
3103 lnk 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals. 3. Output and I/O terminals.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = 55°C to +125°C, VCC = 5.0V ± 10%
Symbol VIH VIL II H II L I OZH I OZL II VIK I OS VOH Parameter Input HIGH Level Input LOW Level Input HIGH Current (5) Input LOW Current (5) High Impedance Output Current (3-State Output pins) (5) Input HIGH Current (5) Clamp Diode Voltage Short Circuit Current Output HIGH Voltage VCC = Min., IIN= 18mA VCC = Max.(3) , VO = GND VCC = Min. VIN = VIH or VIL I OH = 12mA MIL. I OH = 15mA COM'L. I OH = 24mA MIL. I OH = 32mA COM'L.(4) VCC = Min. I OL = 32mA MIL. VIN = VIH or VIL I OL = 48mA COM'L. VCC = 0V, VIN or VO 4.5V -- VCC = Max., VIN = GND or VCC Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VCC = Max. VCC = Max. VI = 2.7V VI = 0.5V VO = 2.7V VO = 0.5V VCC = Max., VI = VCC (Max.) Min. 2.0 -- -- -- -- -- -- -- 60 2.4 2.0 -- -- -- -- Typ.(2) -- -- -- -- -- -- -- 0.7 120 3.3 3.0 0.3 -- 150 5 Max. -- 0.8 ±1 ±1 ±1 ±1 ±1 1.2 225 -- -- 0.55 ±1 -- 500 V µA mV µA Unit V V µA µA µA µA µA V mA V
VOL
IOFF VH
Output LOW Voltage Input/Output Power Off Leakage(5) Input Hysteresis for all inputs Quiescent Power Supply Current
I CCL I CCH I CCZ
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Vcc = 5.0V, +25°C ambient. 3. Not more than one output should be tested at one time. Duration of the test should not exceed one second. 4. Duration of the condition can not exceed one second. 5. The test limit for this parameter is ± 5µA at TA = 55°C.
3103 lnk 04
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IDT54/74FCT810BT/CT FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol ICC ICCD Parameter Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current (4) VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OEA = OEB = GND 50% Duty Cycle VCC = Max. Outputs Open fo= 25MHz 50% Duty Cycle OEA = GND, OEB =VCC VCC = Max. Outputs Open fo = 50MHz 50% Duty Cycle OEA = OEB = GND VIN = VCC VIN = GND Test Conditions(1) Min. -- -- Typ.(2) 0.5 60 Max. 2.0 100 Unit mA µA/ MHz/bit
IC
Total Power Supply Current (6)
VIN = VCC VIN = GND VIN = 3.4V VIN = GND VIN = VCC VIN = GND VIN = 3.4V VIN = GND
--
7.5
13
mA
-- --
7.8 30.0
14.0 50.5 (5)
--
30.5
52.5 (5)
3103 tbl 05
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient. 3. Per TTL driven input; (VIN = 3.4V); all other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fONO) ICC = Quiescent Current (ICCL, ICCH and ICCZ) ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fO= Output Frequency NO= Number of Outputs at fO All currents are in milliamps and all frequencies are in megahertz.
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