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Part: IDT74FCT810T

Category:
 Logic
   -> Clock Drivers/Distribution
             -> CMOS/BiCMOS->FCT/FCT-T Family

Description: Fast CMOS Buffer/clock Driver

Company: Integrated Device Technology, Inc.

Datasheet: Download IDT74FCT810T datasheet     File size : 843 kB

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Datasheet text preview:
IDT74FCT810BT/CT FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGES
FAST CMOS BUFFER/CLOCK DRIVER
IDT74FCT810BT/CT
FEATURES:
- - - - - - - - 0.5 MICRON CMOS technology Guaranteed low skew 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) Available in DIP, SOIC, SSOP, QSOP packages
DESCRIPTION:
The 74FCT810BT/CT is a dual bank inverting/ non-inverting clock driver built using advanced dual metal CMOS technology. It consists of two banks of drivers, one inverting and one non-inverting. Each bank drives five output buffers from a standard TTL-compatible input. The FCT810BT/ CT have low output skew, pulse skew and package skew. Inputs are designed with hysteresis circuitry for improved noise immunity. The outputs are designed with TTL output levels and controlled edge rates to reduce signal noise. The part has multiple grounds, minimizing the effects of ground inductance.
- -
Functional Block Diagram
PIN CONFIGURATION
VCC 1 2 3 4 5 6 7 8 9 10 P 2 0 -1 S O 2 0 -2 S O 2 0 -7 S O 2 0 -8 20 19 18 17 16 15 14 13 12 11 VCC OB1 OB2 OB3 GND OB4 OB5 GND OEB IN B
OEA
OA1
5 IN A O A 1 -O A 5
OA2 OA3 GND OA4
OEB
OA5
5 IN B O B 1 -O B 5
GND OEA IN A
DIP/ SOIC/ SSOP/ QSOP TOP VIEW
COMMERCIAL TEMPERATURE RANGES
1
c 1999 Integrated Device Technology, Inc.
JUNE 1999
DSC-4646/3
IDT74FCT810BT/CT FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG IOUT Description Terminal Voltage with Respect to GND Storage Temperature DC Output Current Max ­0.5 to +7.0 ­65 to +150 ­60 to +120 Unit V °C mA
PIN DESCRIPTION
Pin Names OEA, OEB INA, INB OAn, OBn Description 3-State Output Enable Inputs (Active LOW) Clock Inputs Clock Outputs
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed Vcc by +0.5V unless otherwise noted.
CAPACITANCE (TA = +25OC, f = 1.0MHz)
Symbol CIN COUT Parameter(1) Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 4.5 5.5 Max. 6.0 8.0 Unit pF pF
NOTE: 1. This parameter is measured at characterization but not tested.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%
Symbol VIH VIL IIH IIL IOZH IOZL II VIK IOS VOH VOL IOFF VH ICCL ICCH ICCZ Parameter Input HIGH Level (Input pins) Input LOW Level Input HIGH Current (Input pins) Input LOW Current (Input pins) High Impedance Output Current (3-State Output pins) Input HIGH Current Clamp Diode Voltage Short Circuit Current Output HIGH Voltage Output LOW Voltage Input/Output Power Off Leakage Input Hysteresis for all inputs Quiescent Power Supply Current VCC = Max. VIN = GND or VCC VCC = Max., VI = VCC (Max.) VCC = Min., IIN = ­18mA VCC = Max.(3), VO = GND VCC = Min. VIN = VIH or VIL VCC = Min. VIN = VIH or VIL VCC = 0V, VIN or VO 4.5V -- -- -- -- -- 150 5.0 ±1 -- 500 µA mV µA IOH = ­15mA IOH = ­32mA(4) IOL = 48mA Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VCC = Max. VCC = Max. VI = 2.7V VI = 0.5V VO = 2.7V VO = 0.5V Min. 2.0 -- -- -- -- -- -- -- ­60 2.4 2.0 -- Typ.(2) -- -- -- -- -- -- -- ­0.7 ­120 3.3 3.0 0.3 Max. -- 0.8 ±1 ±1 ±1 ±1 ±1 ­1.2 ­225 -- -- 0.55 V Unit V V µA µA µA µA µA V mA V
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient. 3. Not more than one output should be tested at one time. Duration of the test should not exceed one second. 4. Duration of the condition can not exceed one second.
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IDT74FCT810BT/CT FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol ICC ICCD Parameter Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current(4) VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OEA = OEB = GND 50% Duty Cycle VCC = Max. Outputs Open fo= 25MHz 50% Duty Cycle OEA = GND, OEB =VCC VCC = Max. Outputs Open fo = 50MHz 50% Duty Cycle OEA = OEB = GND VIN = VCC VIN = GND Test Conditions(1) Min. -- -- Typ.(2) 0.5 60 Max. 2.0 100 Unit mA µ A/ MHz/bit
IC
Total Power Supply Current(6)
VIN = VCC VIN = GND VIN = 3.4V VIN = GND VIN = VCC VIN = GND VIN = 3.4V VIN = GND
--
7.5
13
mA
-- --
7.8 30.0
14.0 50.5(5)
--
30.5
52.5(5)
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient. 3. Per TTL driven input; (VIN = 3.4V); all other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fONO) ICC = Quiescent Current (ICCL, ICCH and ICCZ) ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fO= Output Frequency NO= Number of Outputs at fO All currents are in milliamps and all frequencies are in megahertz.
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