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Part: IS62LV12816BLL
Category:
Memory
-> SRAM
-> Async. SRAM
-> 2 Mb
Description:
Company: Integrated Silicon Solution Inc.
Datasheet: Download IS62LV12816BLL datasheet File size : 104 kB
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Datasheet text preview:
IS62LV12816BLL
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
· High-speed access time: 55, 70, 100 ns · CMOS low power operation 120 mW (typical) operating 6 µW (typical) CMOS standby · TTL compatible interface levels · Single 2.7V-3.45V VCC power supply · Fully static operation: no clock or refresh required · Three state outputs · Data control for upper and lower bytes · Industrial temperature available · Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm)
ISSI
DESCRIPTION
®
FEBRUARY 2001
The ISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is f a b r i c a t e d using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62LV12816BLL is packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16 MEMORY ARRAY
VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB CONTROL CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 03/07/01
1
IS62LV12816BLL
PIN CONFIGURATIONS 44-Pin TSOP (Type II)
1
A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC
ISSI
48-Pin mini BGA
2 3 4 5 6
®
A B C D E F G H
LB I/O8 I/O9 GND Vcc I/O14 I/O15 NC
OE UB I/O10 I/O11 I/O12 I/O13 NC A8
A0 A3 A5 NC NC A14 A12 A9
A1 A4 A6 A7 A16 A15 A13 A10
A2 CE I/O1 I/O3 I/O4 I/O5 WE A11
N/C I/O0 I/O2 Vcc GND I/O6 I/O7 NC
PIN DESCRIPTIONS
A0-A16 I/O0-I/O15 CE OE WE Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input LB UB NC Vcc GND Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
TRUTH TABLE
Mode Not Selected Output Disabled Read WE X X H X H H H L L L CE H L L L L L L L L L OE X X H X L L L X X X LB X H X H L H L L H L UB X H X H H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Vcc Current ISB1, ISB2 ISB1, ISB2 ICC ISB ICC
Write
ICC
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 03/07/01
IS62LV12816BLL
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VCC 2.7V - 3.45V 2.7V - 3.45V
ISSI
®
1 2
ABSOLUTE MAXIMUM RATINGS
Symbol VTERM T BIAS VCC TSTG PT
(1)
Parameter Terminal Voltage with Respect to GND Temperature Under Bias Vcc Related to GND Storage Temperature Power Dissipation
Value 0.5 to Vcc+0.5 40 to +85 0.3 to +3.6 65 to +150 1.0
Unit V °C V °C W
3 4 5 6
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VO H VO L VI H VI L ( 1 ) I LI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage GND VIN VCC GND VOUT VCC, Outputs Disabled Test Conditions VCC = Min., IOH = 1 mA VCC = Min., IOL = 2.1 mA Min. 2.0 -- 2.2 0.2 1 1 Max. -- 0.4 VCC + 0.2 0.4 1 1 Unit V V V V µA µA
7 8 9 10
Notes: 1. VIL (min.) = 2.0V for pulse width less than 10 ns.
CAPACITANCE(1)
Symbol CIN COUT Parameter Input Capacitance Input/Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
11 12
Note: 1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 03/07/01
3
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