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Details, datasheet, quote on part number:IS62WV1288BLL
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Datasheet text preview:
IS62WV1288ALL IS62WV1288BLL
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
· High-speed access time: 45ns, 55ns · CMOS low power operation: 30 mW (typical) operating 15 µW (typical) CMOS standby · TTL compatible interface levels · Single power supply: 1.65V--2.2V VDD (62WV1288ALL) 2.5V--3.6V VDD (62WV1288BLL) · Fully static operation: no clock or refresh required · Three state outputs · Industrial temperature available
ISSI
DESCRIPTION
®
PRELIMINARY INFORMATION APRIL 2003
The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with i n n o v a t i v e circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV1288ALL and IS62WV1288BLL are packaged in the JEDEC standard 32-pin TSOP (TYPEI), sTSOP (TYPEI), SOP, and 36-pin mini BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2 CS1 OE WE CONTROL CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B 04/11/03
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IS62WV1288ALL,
PIN CONFIGURATION
IS62WV1288BLL
ISSI
32-pin TSOP (TYPE I) (T), 32-pin sTSOP (TYPE I) (H)
®
36-pin mini BGA (B) (6mm x 8mm)
1 2 3 4 5 6
A B C D E F G H
A0 I/O4 I/O5 GND VDD I/O6 I/O7 A9
A1 A2
CS2 WE NC
A3 A4 A5
A6 A7
A8 I/O0 I/O1 VDD GND
NC OE A10 CS1 A11
NC A16 A12 A15 A13
I/O2 I/O3 A14
A11 A9 A8 A13 WE CS2 A15 VDD NC A16 A14 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
OE A10 CS1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
PIN DESCRIPTIONS
A0-A16 CS1 CS2 OE WE I/O0-I/O7 NC VDD GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output No Connection Power Ground
32-pin SOP (Q)
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VDD A15 CS2 WE A13 A8 A9 A11 OE A10 CS1 I/O7 I/O6 I/O5 I/O4 I/O3
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Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B 04/11/03
IS62WV1288ALL,
IS62WV1288BLL
ISSI
Value 0.2 to VDD+0.3 0.2 to +3.8 65 to +150 1.0 Unit V V °C W
®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM VDD TSTG PT Parameter Terminal Voltage with Respect to GND VDD Related to GND Storage Temperature Power Dissipation
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE (VDD)
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C IS62WV1288ALL 1.65V - 2.2V 1.65V - 2.2V IS62WV1288BLL 2.5V - 3.6V 2.5V - 3.6V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL(1) I LI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage GND VIN VDD GND VOUT VDD, Outputs Disabled Test Conditions IOH = -0.1 mA IOH = -1 mA IOL = 0.1 mA IOL = 2.1 mA VDD 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V Min. 1.4 2.2 -- -- 1.4 2.2 0.2 0.2 1 1 Max. -- -- 0.2 0.4 VDD + 0.2 VDD + 0.3 0.4 0.6 1 1 Unit V V V V V V V V µA µA
Notes: 1. VIL (min.) = 1.0V for pulse width less than 10 ns.
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CS1 H X L L L CS2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B 04/11/03
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