|
Details, datasheet, quote on part number:IS62WV25616BLL
| |
Datasheet text preview:
IS62WV25616ALL IS62WV25616BLL
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
FEATURES
· High-speed access time: 55ns, 70ns · CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby · TTL compatible interface levels · Single power supply 1.65V--2.2V VDD (IS62WV25616ALL) 2.5V--3.6V VDD (IS62WV25616BLL) · Fully static operation: no clock or refresh required · Three state outputs · Data control for upper and lower bytes · Industrial temperature available
ISSI
APRIL 2003
®
DESCRIPTION
The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) or when CS1 is LOW and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV25616ALL/IS62WV25616BLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16 MEMORY ARRAY
VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CS1 OE WE UB LB
CONTROL CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 04/30/03
1
IS62WV25616ALL, IS62WV25616BLL
44-Pin mini TSOP (Type II) (Package Code T) PIN DESCRIPTIONS
A0-A17 I/O0-I/O15
A4 A3 A2 A1 A0 CS1 I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 A17
ISSI
Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground CS1 OE WE LB UB NC VDD GND
®
TRUTH TABLE
Mode Not Selected Output Disabled Read WE X X H H H H H L L L CS1 H X L L L L L L L L OE X X H H L L L X X X LB X H L X L H L L H L UB X H X L H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN VDD Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC
Write
ICC
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 04/30/03
IS62WV25616ALL, IS62WV25616BLL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM VDD TSTG PT Parameter Terminal Voltage with Respect to GND VDD Related to GND Storage Temperature Power Dissipation Value 0.2 to VDD+0.3 0.2 to VDD+0.3 65 to +150 1.0 Unit V V °C W
ISSI
®
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE (VDD)
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C IS62WV25616ALL 1.65V - 2.2V 1.65V - 2.2V IS62WV25616BLL 2.5V-3.6V 2.5V-3.6V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter VOH VOL VIH VIL(1) I LI ILO Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage GND VIN VDD GND VOUT VDD, Outputs Disabled Test Conditions IOH = -0.1 mA IOH = -1 mA IOL = 0.1 mA IOL = 2.1 mA VDD 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V Min. 1.4 2.2 -- -- 1.4 2.2 0.2 0.2 1 1 Max. -- -- 0.2 0.4 VDD + 0.2 VDD + 0.3 0.4 0.6 1 1 Unit V V V V V V V V µA µA
Notes: 1. VIL (min.) = 1.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 04/30/03
3
|
|
