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Part: IS63LV1024-15TI
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 128Kx8
Company: Integrated Silicon Solution Inc.
Datasheet: Download IS63LV1024-15TI datasheet File size : 160 kB
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Datasheet text preview:
IS63LV1024
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
FEATURES
· High-speed access times: 8, 10, 12 and 15 ns · High-performance, low-power CMOS process · Multiple center power and ground pins for greater noise immunity · Easy memory expansion with CE and OE options · CE power-down · Fully static operation: no clock or refresh required · TTL compatible inputs and outputs · Single 3.3V power supply · Packages available: 32-pin 300-mil SOJ 32-pin 400-mil SOJ 32-pin TSOP (Type II)
ISSI
DESCRIPTION
®
SEPTEMBER 2000
The ISSI IS63LV1024 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024 is fabricated using ISSI's high-performance CMOS technology. This highly reliable p r o c e s s coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The IS63LV1024 operates from a single 3.3V power supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE CONTROL CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. H 10/02/00
1
IS63LV1024
PIN CONFIGURATION
32-Pin SOJ
ISSI
PIN CONFIGURATION
32-Pin TSOP (Type II) (T)
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/O7 I/O6 GND Vcc I/O5 I/O4 A12 A11 A10 A9 A8
A0 A1 A2 A3 CE I/O0 I/O1 Vcc GND I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
®
A0 A1 A2 A3 CE I/O0 I/O1 Vcc GND I/O2 I/O3 WE A4 A5 A6 A7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
A16 A15 A14 A13 OE I/o7 I/O6 GND Vcc I/O5 I/O4 A12 A11 A10 A9 A8
PIN DESCRIPTIONS
A0-A16 CE OE WE I/O0-I/O7 Vcc GND Address Inputs Chip Enable Input Output Enable Input Write Enable Input Bidirectional Ports Power Ground
TRUTH TABLE
Mode WE CE H L L L OE X H L X I/O Operation Vcc Current High-Z High-Z DOUT DIN ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2 Not Selected X (Power-down) Output Disabled H Read H Write L
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM T BIAS T STG PT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation Value 0.5 to Vcc + 0.5 55 to +125 65 to +150 1.0 Unit V °C °C W
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. H 10/02/00
IS63LV1024
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VCC 3.3V ± 0.3V 3.3V ± 0.15V
ISSI
®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter VO H VO L VI H VIL I LI ILO Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VCC GND VOUT VCC, Outputs Disabled Com. Ind. Com. Ind. Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 -- 2.2 0.3 1 5 1 5 Max. -- 0.4 VCC + 0.3 0.8 1 5 1 5 Unit V V V V µA µA
Notes: 1. VIL = 3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter I C C1 ISB Vcc Operating Supply Current TTL Standby Current (TTL Inputs) TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, f = Max. VCC = Max., VIN = VIH or VIL CE VIH, f = Max VCC = Max., VIN = VIH or VIL CE VIH, f = 0 VCC = Max., CE VCC 0.2V, VIN VCC 0.2V, or VIN 0.2V, f = 0 Com. Ind. Com. Ind. Com. Ind. Com. Ind. -8 ns Min. Max. -- -- -- -- -- -- -- -- 160 170 55 55 25 30 5 10 -10 ns Min. Max. -- -- -- -- -- -- -- -- 150 160 45 45 25 30 5 10 -12 ns Min. Max. -- -- -- -- -- -- -- -- 130 140 40 40 25 30 5 10 -15 ns Min. Max. -- -- -- -- -- -- -- -- 120 130 35 35 25 30 5 10 Unit mA mA
ISB1
mA
ISB2
mA
Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE(1,2)
Symbol CIN CI/O Parameter Input Capacitance Input/Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. H 10/02/00
3
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