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Details, datasheet, quote on part number:2N3957
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| Part: | 2N3957 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => N-Channel => Dual |
| Description: | N-channel Dual Silicon Junction Field-effect Transistor |
| Company: | InterFET Corporation |
| Datasheet: | Download 2N3957 datasheet File size : 68 kB |
| Request For quote: | Find where to buy 2N3957
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Datasheet text preview:
B-6
01/99
2N3957, 2N3958
N-Channel Dual Silicon Junction Field-Effect Transistor
¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides)
50 V 50 mA 250 mW 500 mW 4.3 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Drain Gate Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio gfs gos Ciss Cdgo Crss NF | IG1 IG2 |
IDSS1 / IDSS2
| VGS1 VGS2 | VGS1 VGS2 T
2N3957 Min V(BR)GSS IGSS IG VGS VGS(OFF) VGS(F) IDSS 0.5 50 100 500 50 250 4.2 0.5 1 4 4.5 2 5 Max
2N3958 Min 50 100 500 50 250 4.2 0.5 1 0.5 4 4.5 2 5 Max Unit V pA nA pA nA V V V V mA
Process NJ16 Test Conditions IG = 1 µA, VDS = ØV VGS = 30V, VDS = ØV VGS = 30V, VDS = ØV VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 50 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 1 nA VDS = Ø, IG = 1 mA VDS = 20V, VGS = ØV TA = 125°C TA = 125°C
1000 3000 1000 3000 1000 35 4 1.5 1.2 0.5 10 0.9 1 20 6 7.5 0.9 1 0.85 0.85 1000 35 4 1.5 1.2 0.5 10 1 25 8 10 1
µS µS µS pF pF pF dB nA mV mV mV
VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 10V, IS = ØA VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV RG = 10 M VDS = 20V, ID = 200 µA VDS = 20V, VGS = ØV VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA
f = 1 kHz f = 200 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 100 Hz TA = 125°C
TA = 25°C to 55°C TA = 25°C to 125°C
gfs1 / gfs2
f = 1 kHz
TOÐ71 Package
See Section G for Outline Dimensions 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate
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