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Details, datasheet, quote on part number:2N4119A
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| Part: | 2N4119A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => N-Channel => Single |
| Description: | N-channel Silicon Junction Field-effect Transistor |
| Company: | InterFET Corporation |
| Datasheet: | Download 2N4119A datasheet File size : 94 kB |
| Request For quote: | Find where to buy 2N4119A
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Datasheet text preview:
01/99
B-9
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C)
40 V 50 mA 300 mW 2 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance gfs gos Ciss Crss V(BR)GSS IGSS VGS(OFF) IGSS
2N4117 2N4117A Min 40 10 1 0.6 0.03 0.015 1.8 0.09 0.09 Max
2N4118 2N4118A Min 40 10 1 1 0.08 0.08 3 0.24 0.24 Max
2N4119 2N4119A Min 40 10 1 2 0.2 0.2 6 0.6 0.6 Max Unit V pA pA V mA mA
Process NJ01 Test Conditions IG = 1µA, VDS = ØV VGS = 20V, VDS = ØV VGS = 20V, VDS = ØV VDS = 10V, ID = 1 nA VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV
70
210 3 3 1.5
80
250 5 3 1.5
100
330 10 3 1.5
µS µS pF pF
VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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