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Details, datasheet, quote on part number: 2N5115
 
 
Part number2N5115
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => P-Channel
DescriptionP-channel Silicon Junction Field-effect Transistor
CompanyInterFET Corporation
DatasheetDownload 2N5115 datasheet
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Specifications, Features, Applications

Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range

At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS

500 1 Drain Cutoff Current ID(OFF) Drain Source ON Voltage Static Drain Source ON Resistance Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Ciss Crss VDS(ON) rDS(ON)




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