Details, datasheet, quote on part number: IFN860
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| Part number | IFN860 |
| Category | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs |
| Description | Dual N-channel Silicon Junction Field-effect Transistor |
| Company | InterFET Corporation
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| Datasheet | Download IFN860 datasheet |
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| Specifications, Features, Applications |
Dual N-Channel Silicon Junction Field-Effect Transistor
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Leakage Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Differential Gate Source Voltage Dynamic Electrical Characteristics Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage gm Ciss Crss ¯N 25 V(BR)GSS IGSS VGS(OFF) IDSS
1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate
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