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Details, datasheet, quote on part number: IFN860
 
 
Part numberIFN860
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs
DescriptionDual N-channel Silicon Junction Field-effect Transistor
CompanyInterFET Corporation
DatasheetDownload IFN860 datasheet
 


 
Specifications, Features, Applications

Dual N-Channel Silicon Junction Field-Effect Transistor

Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range

At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Leakage Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Differential Gate Source Voltage Dynamic Electrical Characteristics Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage gm Ciss Crss N 25 V(BR)GSS IGSS VGS(OFF) IDSS

1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate



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