Details, datasheet, quote on part number: IFN860
PartIFN860
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs
DescriptionDual N-channel Silicon Junction Field-effect Transistor
CompanyInterFET Corporation
DatasheetDownload IFN860 datasheet
  

 

Features, Applications

Dual N-Channel Silicon Junction Field-Effect Transistor

Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range

At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Leakage Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Differential Gate Source Voltage Dynamic Electrical Characteristics Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage gm Ciss Crss ¯N 25 V(BR)GSS IGSS VGS(OFF) IDSS

1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate

 

Some Part number from the same manufacture InterFET Corporation
IFP44 N-channel Silicon Junction Field-effect Transistor
IFPA300 Monolithic JFET Preamplifiers
J108 N-channel Silicon Junction Field-effect Transistor
J110
J111
J174 P-channel Silicon Junction Field-effect Transistor
J176
J201 N-channel Silicon Junction Field-effect Transistor
J203
J210
J212
J230
J232
J304
J308
J310
J500 Current Regulator Diode
J506
J553
P1086 P-channel Silicon Junction Field-effect Transistor
PAD1 Pico-ampere Diodes
Same catergory

2KBP02M : 2A Bridge Rectifier. Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, = 50°C Non-repetitive Peak Forward Surge Current Storage Temperature Range Operating Junction Temperature 10M °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2SD1821 : VCEO(V) = 150 ;; IC(A) = 0.05 ;; HFE(min) = 130 ;; HFE(max) = 330 ;; Package = SMini3-G1.

CM300HA-12H : 300 Amp Igbt Module For High Power Switching Use Insulated Type. : Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. : Low Drive Power.

FQI33N10 : 100V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

T1929N : SCR / Diode Presspacks. Periodische Vorwärts- und RückwärtsSpitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert Dauergrenzstrom Stoßstrom-Grenzwert Grenzlastintegral Kritische Stromsteilheit Kritische Spannungssteilheit repetitive peak forward off-state and reverse voltages non-repetitive peak forward off-state.

KHB019N20F1 : High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies..

HAH1352-1R2 : 1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 1.2 microH ; Rated DC Current: 12000 milliamps ; Operating Temperature: -20 to 105 C (-4 to 221 F).

MD5020-LF : 50 A, 16 V, SILICON, RECTIFIER DIODE. s: Package: ROHS COMPLIANT, PRESSFIT-1 ; Number of Diodes: 1 ; VRRM: 16 volts ; IF: 50000 mA.

SIB456DK-T1-GE3 : POWER, FET. TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Converters Full-Bridge Converters For Power Bricks and POL Power 1.60 mm AJX Part # code XXX Lot Traceability.

ST319RAD10NJLH : GENERAL PURPOSE INDUCTOR. s: Application: General Purpose. Chip Inductors - 0604SMS Series (1610) Chip Inductors for Critical Applications ST319RAD Combines the exceptionally high of an air core inductor with the rugged construction of a ceramic body component. Inductance values: 10.4 nH SRF DCR 900 MHz1.7 GHz Inductance2Percent Q Imax tolerance3 min4 Part number1(nH) L typ Q typ L typ Q typ (GHz) (Ohms) (A) ST319RAD7N6JLZ7.6.

T0024S : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.

THS10500RJ : RESISTOR, WIRE WOUND, 10 W, 5 %, 30 ppm, 500 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 500 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 30 ±ppm/°C ; Power Rating: 10 watts (0.0134 HP).

10SLV33M5X6.1 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 33 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 33 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 3.3 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature:.

164-01A06 : UNSHIELDED, 0.016 uH - 0.019 uH, VARIABLE INDUCTOR. s: Devices in Package: 1 ; Core Material: ALUMINUM ; Lead Style: Radial, WIRE ; Configuration: Variable ; Application: RF Choke ; Inductance Range: 0.0160 to 0.0190 microH ; Operating Temperature: -40 to 85 C (-40 to 185 F).

2331MBM2225LGN0110 : CAP,AL2O3,330UF,160VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

402T47 : CAPACITOR, CERAMIC, 4000 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole ; Operating Temperature: -55 to 125 C (-67 to 257 F).

 
0-C     D-L     M-R     S-Z