Details, datasheet, quote on part number: IFN860
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs
DescriptionDual N-channel Silicon Junction Field-effect Transistor
CompanyInterFET Corporation
DatasheetDownload IFN860 datasheet


Features, Applications

Dual N-Channel Silicon Junction Field-Effect Transistor

Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range

At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Leakage Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Differential Gate Source Voltage Dynamic Electrical Characteristics Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage gm Ciss Crss ¯N 25 V(BR)GSS IGSS VGS(OFF) IDSS

1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate


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