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Part: J110
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> RF FETs
Description: N-channel Silicon Junction Field-effect Transistor
Company: InterFET Corporation
Datasheet: Download J110 datasheet File size : 232 kB
Request For quote: Find where to buy J110
Datasheet text preview:
B-50
01/99
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers ¥ Commutators ¥ Analog Switches
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
25 V 50 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Cgd Cgs Cgd + Cgs V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF)
J110 Min 25 3 0.5 10 3 4 Max
J110A Min 25 3 0.5 10 3 4 Max Unit V nA V mA nA
Process NJ450 Test Conditions IG = 1 µA, VDS = ØV VGS = 15V, VDS = ØV VDS = 5V, ID = 1 µA VDS = 15V, VGS = ØV VDS = 5V, VGS = 10V
18 15 15 85 Typ 4 1 6 30 Typ 4 1 6 30
25 15 15 85
pF pF pF
VGS = Ø, VDS < = 0.1V VDS = ØV, VGS = 10V VDS = ØV, VGS = 10V VDS = VGS = ØV
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz
ns ns ns ns VDD VGS(OFF) RL
J110 1.5 5 150
J110A 1.5 5 150 V V
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ110, SMPJ110A
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Others parts begin by j1
J1-1
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