|
|
Part: J211
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> RF FETs
Description: N-channel Silicon Junction Field-effect Transistor
Company: InterFET Corporation
Datasheet: Download J211 datasheet File size : 226 kB
Request For quote: Find where to buy J211
Datasheet text preview:
B-56
01/99
J210, J211
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ General Purpose Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
25 V 10 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage g fs g os Ciss Crss eN ¯ V(BR)GSS IGSS IG VGS(OFF) IDSS
J210 Min 25 100 10 1 2 3 15 2.5 7 Typ Max Min 25
J211 Typ Max Unit V 100 10 4.5 20 pA pA V mA
Process NJ26L Test Conditions IG = 1µA, VDS = ØV VGS = 15V, VDS = ØV VDS = 20V, ID = 1 mA VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV
4000
12000 6000 150 4 1 10 4 1 10
12000 200
µS µS pF pF
nV/Hz
VDS = 15V, VGS = Ø V VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ210, SMPJ211
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Others parts begin by j2
J2-1
|
|
|
