|
|
Part: J212
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> RF FETs
Description: N-channel Silicon Junction Field-effect Transistor
Company: InterFET Corporation
Datasheet: Download J212 datasheet File size : 226 kB
Request For quote: Find where to buy J212
Datasheet text preview:
01/99
B-57
J212
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifier ¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
25 V 10 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs
J212 Min V(BR)GSS IGSS IG VGS(OFF) IDSS 4 15 10 6 40 25 100 Typ Max Unit V pA pA V mA
Process NJ26L Test Conditions IG = 1 µA, VDS = ØV VGS = 15V, VDS = ØV VDS = 20V, ID = 1 mA VDS = 15V, ID = 1 nA VDS = 15V, VGS = Ø V
7000 4 1 10
12000 200
µS µS pF pF
nV/Hz
VDS = 15V, VGS = Ø V VDS = 15V, VGS = Ø V VDS = 15V, VGS = Ø V VDS = 15V, VGS = Ø V VDS = 15V, VGS = Ø V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gos Ciss Crss eN ¯
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ212
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Others parts begin by j2
J2-1
|
|
|
