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Details, datasheet, quote on part number:J309
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| Part: | J309 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs |
| Description: | N-channel Silicon Junction Field-effect Transistor |
| Company: | InterFET Corporation |
| Datasheet: | Download J309 datasheet File size : 97 kB |
| Request For quote: | Find where to buy J309
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Datasheet text preview:
01/99
B-61
J308, J309
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
25 V 10 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
Common Source Forward Transconductance
J308 Min V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 12 1 25 1 1 6.5 1 60 12 1 Typ Max Min 25
J309 Typ Max Unit V 1 1 4 1 30 nA µA V V mA
Process NJ72 Test Conditions IG = 1µA, VDS = ØV VGS = 15V, VDS = ØV VGS = 15V, VDS = ØV VDS = 10V, ID = 1 nA VDS = ØV, IG = 1 mA VDS = 10V, VGS = ØV TA = +125°C
g fs g os g fg g og Cdg Cgs eN ¯ Re(Yfs) Re(Yig) Re(Yis) Re(Gos) Gpg NF
8000 17000 250 13000 150 1.8 4 10 12 14 0.4 0.15 16 11 1.5 2.7 2.5 5
10000 17000 250 13000 100 1.8 4 10 12 14 0.4 0.15 16 11 1.5 2.7 2.5 5
µS µS µS µS pF pF
nV/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = ØV, VGS = 10V VDS = ØV, VGS = 10V VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 15V, ID = 10 mA VDS = 15V, ID = 10 mA
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 kHz f = 105 MHz f = 105 MHz f = 105 MHz f = 105 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz
Common Source Output Conductance
Common Gate Forward Transconductance Common Gate Output Transconductance
Gate Drain Capacitance Gate Source Capacitance Equivalent Short Circuit Input Noise Voltage Common Source Forward Transconductance Common Gate Input Conductance Common Source Input Conductance Common Source Output Conductance Common Gate Power Gain at Noise Match Noise Figure
µS µS µS µS dB dB dB dB
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ308, SMPJ309
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
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