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Part: J310

Category:
 Discrete
   -> Transistors
     -> FETs (Field Effect Transistors)
       -> JFETs (Junction-FETs)
         -> RF FETs

Description: N-channel Silicon Junction Field-effect Transistor

Company: InterFET Corporation

Datasheet: Download J310 datasheet     File size : 209 kB

Request For quote: Find where to buy J310



Datasheet text preview:
B-62
01/99
J310
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation
­ 25 V ­ 25 V 10 mA 360 mW
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs
J310 Min V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 24 ­2 ­ 25 ­1 ­1 ­ 6.5 1 60 Typ Max Unit V nA µA V V mA
Process NJ72 Test Conditions IG = ­ 1 µA, VDS = ØV VGS = ­ 15V, VDS = ØV VGS = ­ 15V, VDS = ØV VDS = 10V, ID = 1 nA VDS = ØV, IG = 1 mA VDS = 10V, VGS = ØV TA = + 125°C
8000
17000 250 1200 150 1.8 4 10 12 14 0.4 0.15 16 11 1.5 2.7 2.5 5
µS µS µS µS pF pF
nV/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = Ø V, VGS = ­ 10V VDS = Ø V, VGS = ­ 10V VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 15V, ID = 10 mA VDS = 15V, ID = 10 mA
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 Hz f = 105 MHz f = 105 MHz f = 105 MHz f = 105 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz
Common Source Output Conductance
Common Gate Forward Transconductance Common Gate Output Transconductance
gos gfg gog Cdg Cgs eN ¯
Gate Drain Capacitance Gate Source Capacitance Equivalent Short Circuit Input Noise Voltage
Common Source Forward Transconductance Re (Yfs) Common Gate Input Conductance Common Source Input Conductance Common Source Output Conductance
µS µS µS µS dB dB dB dB
Re (Yig) Re (Yis) Re (gos) Gpg NF
Common Gate Power Gain at Noise Match Noise Figure
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ310
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com


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