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Details, datasheet, quote on part number:SMP5912
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| Part: | SMP5912 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs |
| Description: | Dual N-channel Silicon Junction Field-effect Transistor |
| Company: | InterFET Corporation |
| Datasheet: | Download SMP5912 datasheet File size : 66 kB |
| Request For quote: | Find where to buy SMP5912
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Datasheet text preview:
B-64
01/99
SMP5911, SMP5912
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Wideband Differential Amplifiers
At 25°C free air temperature: Static Electrical Characteristics
Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (Pulsed) V(BR)GSS IGSS IG VGS(OFF) VGS IDSS
SMP5911 Min
25 100 250 100 100 1.0 0.3 7 5 4 40
SMP5912 Min
25 100 250 100 100 1.0 0.3 7 5 4 40
Process NJ30L Unit
V pA nA pA nA V V mA
Max
Max
Test Conditions
IG = 1 µA, VDS = ØV VGS = 15V, VDS = ØV VGS = 15V, VDS = ØV VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDS = 15V, ID = 5 nA VDS = 15V, ID = 5 mA VDS = 10V, VGS = ØV TA = 125°C TA = 150°C
Dynamic Electrical Characteristics
Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance
Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gfs gos Ciss Crss eN ¯ NF VGS1 VGS2 IG1 IG2
3000 10000 3000 10000 3000 10000 3000 10000 100 150 5 1.2 20 1 10 20 1 1 20 20 20 20 0.95 0.95 0.95 100 150 5 1.2 20 1 15 20 1 1 40 40 40 40
µS µS µS µS pF pF
nV/Hz
VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA RG = 100 K VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, VGS = ØV VDG = 10V, ID = 5 mA
f = 1 kHz f = 100 MHz f = 1 kHz f = 100 MHz f = 1 MHz f = 1 MHz f = 10 kHz f = 10 kHz
Noise Figure Gate Source Differential Voltage Gate Differential Current Drain Saturation Current Ratio Transconductance Ratio Gate Source Differential Voltage With Temperature
dB mV nA
TA = 125°C f = 1 kHz TA = 25°C TB = 125°C TA = 35°C TB = 25°C
IDSS1 / IDSS2 0.95 gfs1 / gfs2
VGS1 VGS2 T
µV/°C µV/°C µV/°C µV/°C
VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA
SOIC-8 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
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