Details, datasheet, quote on part number: 124NQ
Part124NQ
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => >100 Amp
Title>100 Amp
DescriptionSchottky Rectifier 120 Amp
CompanyInternational Rectifier Corp.
DatasheetDownload 124NQ datasheet
  

 

Features, Applications

IF(AV) Rectangular waveform VRRM range IFSM 5 µs sine TJ @120Apk,TJ=100°C range

The 124NQ... (R) high current Schottky rectifier modules have been optimized for extremely low forward voltage drop, with higher leakage. The proprietary barrier technology allows for reliable operation 125° C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, welding, and reverse battery protection. C TJ operation Unique high power Half Pak module High purity, high temperature epoxy encapsulation for en hanced mechanical strength and moisture resistance Extremely low forward voltage drop High frequency operation Guard ring enhanced ruggedness and long term reliability

Outline D-67 HALF PAK Module Dimensions in millimeters and (inches)
VR Max. DC Reverse Voltage (V) 40 45 VRWM Max. Working Peak Reverse Voltage (V)

IF(AV) Max. Average Forward Current * See Fig. 5 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7 Non-Repetitive Avalanche Energy Repetitive Avalanche Current

50% duty cycle 76° C, rectangular wave form 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied

= 25 °C, IAS = 20 Amps, 0.67 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. x VR typical

Max. Reverse Leakage Current (1) * See Fig. 2 Max. Junction Capacitance Typical Series Inductance
= 5VDC, (test signal range 25 °C From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change (Rated VR)
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range

RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Terminal Torque Case Style Min. Max. Min. Max.

Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

 

Some Part number from the same manufacture International Rectifier Corp.
125NQ015 15V 120A Schottky Discrete Diode in a D-67 Half-pak Package
125Q015 Schottky Rectifier 120 Amp
129NQ135 135V 120A Schottky Discrete Diode in a D-67 Half-pak Package
129NQSeries 120 Amp Schottky Rectifier
12CGQ150 Schottky Rectifier 35 Amp
12CLQ150
12CTQ035 35V 12A Schottky Common Cathode Diode in a TO-220AB Package
12CWQ03FN 30V 12A Schottky Common Cathode Diode in a D-pak Package
12CWQ04FN 40V 12A Schottky Common Cathode Diode in a D-pak Package
12CWQ06FN 60V 12A Schottky Common Cathode Diode in a D-pak Package
12CWQ10FN 100V 12A Schottky Common Cathode Diode in a D-pak Package
12CWQ150FN Schottky Rectifier 12 Amp 150v
12F Standard Recovery Diodes
12F10 100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12F20 200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12F20 12f(r) Series Standard Recovery Diodes Stud Version
12F40 200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12F40 12f(r) Series Standard Recovery Diodes Stud Version
12F60 200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12F60 12f(r) Series Standard Recovery Diodes Stud Version
12F80 200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
Same catergory

1SMA5.0AT3thru1SMA78AT3 : Zener Transient Voltage Suppressors. GENERAL DATA IS APPLICABLE TO ALL SERIES IN THIS GROUP Reverse Stand­Off Voltage Range: 78 V Peak Power 400 Watts 1.0 ms ESD Rating of Class 3 (>16 kV) per Human Body Model Pico Seconds Response Time V to BV) Flat Handling Surface for Accurate Placement Package Design for Top Side or Bottom Circuit Board Mounting Available in Tape and Reel Low Profile.

LWE2010S : Microwave. NPN Microwave Power Transistor. Product Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell.

MGSF1P02ELT1 : Power MOSFET 750 Mamps, 20 Volts , Package: SOT-23 (TO-236), Pins=3. These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc­dc converters and power management in portable and battery­powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

0306ZC : CAPACITOR, CERAMIC, MULTILAYER, 10 V, SURFACE MOUNT, 0306. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

DSC2G02 : VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN ; Number of units in IC: 1 ; Operating Frequency: 650 MHz.

GJM1555C1H2R7WB01B : CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.0000027 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.70E-6 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

HM65-H1R8LFTR : 1 ELEMENT, 1.8 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, High Current ; Inductance Range: 1.8 microH ; Operating Temperature: -40 to 130 C (-40 to 266 F).

MIC24A10-0101W-LF3 : DATACOM TRANSFORMER FOR 10/100 APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Standards: RoHS.

RB162L-40 : SIGNAL DIODE. s: Diode Type: General Purpose. Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 1)Small power mold type. (PMDS) 2)High reliability. Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz1cyc) Junction temperature.

SI8407DB-T1 : 5800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0450 ohms ; Package Type: MICRO FOOT, 6 PIN ; Number of units in IC: 1.

SS8P3C-G3/86A : 4 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 4000 mA ; RoHS Compliant: RoHS ; Package: GREEN, PLASTIC, SMPC, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

154PMB202KAP2 : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 2000 V, 0.15 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 0.1500 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 2000 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 85 C (-40.

335STF050M : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 3.3 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 3.3 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Leakage Current: 3 microamps ; ESR: 60286 milliohms ; Mounting Style: Through Hole ; Operating.

934033550114 : L BAND, Si, NPN, RF POWER TRANSISTOR. s: Polarity: NPN ; Number of units in IC: 1.

 
0-C     D-L     M-R     S-Z