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Details, datasheet, quote on part number:150EBU02
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| Part: | 150EBU02 |
| Category: | Discrete => Diodes & Rectifiers => Fast Recovery Diodes |
| Description: | 200V 150A Ultra-fast Discrete Diode in a Powirtab Package |
| Company: | International Rectifier Corp. |
| Datasheet: | Download 150EBU02 datasheet File size : 149 kB |
| Request For quote: | Find where to buy 150EBU02
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Datasheet text preview:
Bulletin PD-20741 rev. A 01/01
150EBU02
Ultrafast Soft Recovery Diode
Features · Ultrafast Recovery · 175°C Operating Junction Temperature Benefits · Reduced RFI and EMI · Higher Frequency Operation · Reduced Snubbing · Reduced Parts Count
trr = 45ns IF(AV) = 150Amp VR = 200V
Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
Absolute Maximum Ratings Parameters
VR IF(AV) IFSM IFRM ! TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 116°C Single Pulse Forward Current, TC = 25°C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures
Max
200 150 1600 380 - 55 to 175
Units
V A
°C
!" Square Wave, 20kHz
Case Styles
PowIRtab
1
150EBU02
Final PD-20741 rev. A 01/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
200 V V V µA mA pF nH IR = 100µA IF = 150A IF = 150A, TJ = 175°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 200V Measured lead to lead 5mm from package body
0.99 1.13 0.79 0.90 180 3.5 50 2 -
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
t rr Reverse Recovery Time
Min Typ Max Units Test Conditions
-
34 58 4.5 9.0 87 300
45 -
ns
IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 150A VR = 160V diF /dt = 200A/µs
IRRM
Peak Recovery Current
-
A
TJ = 25°C TJ = 125°C
Qrr
Reverse Recovery Charge
-
nC
TJ = 25°C TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
RthJC RthCS # Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.18 T Mounting Torque 1.2 10
#" Mounting Surface, Flat, Smooth and Greased
Min
Typ
0.2
Max
0.35
Units
K/W
5.02
g (oz)
2.4 20
N*m lbf.in
2
150EBU02
Bulletin PD-20741 rev. A 01/01
1000
Reverse Current - I R (µA)
1000 100 10 1 0.1 0.01
25°C T J = 175°C 125°C
Instantaneous Forward Current - I F (A)
100
T = 175°C
J J J
0.001 0 50 100 150 200
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
T = 125°C T = 25°C
10000
10
Junction Capacitance - C T (pF)
T J = 25°C
1000
1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
100 1 10 100 1000
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
1
Thermal Impedance Z thJC (°C/W)
0.1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
PDM
t1 t2 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
3
150EBU02
Final PD-20741 rev. A 01/01
180
Allowable Case Temperature (°C)
250
Average Power Loss ( Watts )
160 140 120 100 Square wave (D = 0.50)
80% Rated Vr applied
200 150 100 50 0
RMS Limit
DC
80
see note (3)
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC
60 0 50 100 150 200 250
Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
0
50
100
150
200
250
Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics
70
IF = 150A IF = 75A
900 800 700
Vr = 160V Tj = 125°C Tj = 25°C
60
50
Qrr ( nC ) trr ( ns )
600 500 400 300 200
IF = 150A IF = 75A
40
30
20
Vr = 160V Tj = 125°C Tj = 25°C
100
1000
10 100
di F /dt (A/µs )
0 100
di F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
150EBU02
Bulletin PD-20741 rev. A 01/01
Reverse Recovery Circuit
VR = 200V
0.01 L = 70µH D.U.T.
di F /dt dif/dt AD JUST
D G IRFP250 S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
IF 0
trr ta tb
4
2
Q rr I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
di fF/dt /dt
1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
5
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