|
|
Part: 150EBU04
Category:
Discrete
-> Diodes & Rectifiers
-> Fast Recovery Diodes
Description: 400V 150A Ultra-fast Discrete Diode in a Powirtab Package
Company: International Rectifier Corp.
Datasheet: Download 150EBU04 datasheet File size : 143 kB
Request For quote: Find where to buy 150EBU04
Datasheet text preview:
Bulletin PD-20744 rev. A 01/01
150EBU04
Ultrafast Soft Recovery Diode
Features · Ultrafast Recovery · 175°C Operating Junction Temperature Benefits · Reduced RFI and EMI · Higher Frequency Operation · Reduced Snubbing · Reduced Parts Count
trr = 60ns IF(AV) = 150Amp VR = 400V
Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
Absolute Maximum Ratings Parameters
VR IF(AV) IFSM IFRM ! TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 104°C Single Pulse Forward Current, TC = 25°C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures
Max
400 150 1500 300 - 55 to 175
Units
V A
°C
!" Square Wave, 20kHz
Case Styles
PowIRtab 1
150EBU04
Bulletin PD-20744 rev. A 01/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
400 1.07 0.9 1.3 1.1 V V V V µA mA pF nH IR = 200µA IF = 150A IF = 150A, TJ = 175°C IF = 150A, TJ = 125°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 400V Measured lead to lead 5mm from package body
0.96 1.17 100 3.5 50 4 -
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
t rr Reverse Recovery Time
Min Typ Max Units Test Conditions
-
93 172 11 20 490 1740
60 -
ns
IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 150A VR = 200V diF /dt = 200A/µs
IRRM
Peak Recovery Current
-
A
TJ = 25°C TJ = 125°C
Qrr
Reverse Recovery Charge
-
nC
TJ = 25°C TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
RthJC RthCS # Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.18 T Mounting Torque 1.2 10
#" Mounting Surface, Flat, Smooth and Greased
Min
Typ
0.2
Max
0.35
Units
K/W
5.02
g (oz)
2.4 20
N*m lbf.in
2
150EBU04
Bulletin PD-20744 rev. A 01/01
1000
Reverse Current - I R (µA)
1000 100 10 1 0.1 0.01
25°C T J = 175°C 125°C
Instantaneous Forward Current - I F (A)
100
T = 175°C J T = 125°C J T = 25°C J
0.001 0 100 200 300 400
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
10000
10
Junction Capacitance - C T (pF)
T J = 25°C
1000
100
1 0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
10 10
100
1000
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
1
Thermal Impedance Z thJC (°C/W)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
PDM
0.1
Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t 2
t1 t2
2. Peak Tj = Pdm x ZthJC + Tc
.01 0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
3
150EBU04
Bulletin PD-20744 rev. A 01/01
80
Allowable Case Temperature (°C)
300
Average Power Loss ( Watts )
60 40
DC
250 200 150 100 50 0 0 50 100 150
RMS Limit
20 00
Square wave (D = 0.50) 80 Rated Vr applied
60
see note (3)
40 0 50 100 150 200 250
Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
D = 0.01 D = 0.02 D = 0.05 D = 0.10 DDC0.20 = D = 0.50 DC
200
250
Average Forward Current - IF(AV)(A) Fig. 6 - Forward Power Loss Characteristics
250
Vr = 200V Tj = 125°C Tj = 25°C
5000
IF = 150A IF = 75A
4500 4000
Vr = 200V Tj = 125°C Tj = 25°C
200
3500
Qrr ( nC ) trr ( ns )
3000 2500 2000 1500
IF = 150A IF = 75A
150
100
1000 500
50 100
di F /dt (A/µs )
1000
0 100
di F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
4
150EBU04
Bulletin PD-20744 rev. A 01/01
Reverse Recovery Circuit
VR = 200V
0.01 L = 70µH D.U.T.
di F /dt dif/dt AD JUST
D G IRFP250 S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
IF 0
trr ta tb
4
2
Q rr I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
/dt di fF/dt
1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
5
Others parts begin by 15
15-1 15-2 15-3 15-4 15-5 15-6 15-7 15-8 15-9 15-10 15-11 15-12 15-13
|
|
|
